Keyphrases
High Density
100%
Physical Parameters
100%
I-V Characteristics
100%
III-V Semiconductors
100%
Plasma Density
100%
Electron Cyclotron Resonance
100%
Etching Rate
100%
Reactive Plasma
100%
Langmuir Probe
66%
Mathematical Model
33%
Pressure Dependence
33%
Removal Methods
33%
Electronic Properties
33%
Optical Methods
33%
Chlorine
33%
Emission Spectroscopy
33%
Langmuir
33%
Plasma Etching
33%
Invasive Procedures
33%
Second Derivative
33%
Dependent Behavior
33%
First Derivative
33%
Energy Dependence
33%
Relative Amount
33%
Radial Variation
33%
Actinometry
33%
Electron Temperature
33%
Reactive Ion Etching
33%
Pure Argon
33%
Maxwellian Distribution
33%
Electronic Parameters
33%
Electron Energy Distribution Function
33%
Low-pressure Plasma
33%
Concave Structure
33%
Radial Uniformity
33%
Significant Properties
33%
Uniform Discharge
33%
Bi-Maxwellian Distribution Function
33%
Neutral Gas Temperature
33%
Electrical Evaluation
33%
Discharge Model
33%
Reactive Composites
33%
Engineering
Physical Parameter
100%
III-V Semiconductor
100%
Etch Rate
100%
Cyclotron Resonance
100%
Current-Voltage Characteristic
100%
Plasma Density
100%
Electron Energy
66%
Pressure Plasma
33%
Special Attention
33%
Dependent Behavior
33%
Removal Process
33%
Relative Amount
33%
Maxwellian Distribution Function
33%
Energy Distribution
33%
Gas Temperature
33%
Maxwellian Distribution
33%
Mathematical Model
33%
Material Science
Density
100%
Current-Voltage Characteristic
100%
Plasma Density
100%
III-V Semiconductor
100%
Electronic Property
33%
Reactive Ion Etching
33%
Emission Spectroscopy
33%
Composite Material
33%
Surface (Surface Science)
33%
Physics
Electron Cyclotron Resonance
100%
Blood Plasma
100%
Plasma Density
42%
Electrostatic Probe
28%
Distribution Function
28%
Electron Energy
28%
Mathematical Model
14%
Neutral Gas
14%
Optical Method
14%
Energy Distribution
14%
Gas Temperature
14%