Correction to the Schenk model of band-to-band tunneling in silicon applied to the simulation of nanowire tunneling transistors

Alexander Heigl; Andreas Schenk; Gerhard Wachutka

doi:10.1109/IWCE.2009.5091099

Correction to the Schenk model of band-to-band tunneling in silicon applied to the simulation of nanowire tunneling transistors

Alexander Heigl
, Andreas Schenk
, Gerhard Wachutka

Computation, Information and Technology

Technical University of Munich
ETH Zurich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We found out that the standard form of Schenk's model of band-to-band tunneling in silicon [1] involves a poor approximation of the Airy-Integral and, therefore, overestimates the channel currents of realistic tunneling devices. In this paper we propose a better approximation resulting in a corrected form of the model, and we demonstrate its impact on the device characteristics of a tunneling transistor. Additionally, we investigated the influence of the corrected model on the local density correction and quantum confinement.

Original language	English
Title of host publication	Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
DOIs	https://doi.org/10.1109/IWCE.2009.5091099
State	Published - 2009
Event	2009 13th International Workshop on Computational Electronics, IWCE 2009 - Beijing, China Duration: 27 May 2009 → 29 May 2009

Publication series

Name	Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Conference

Conference	2009 13th International Workshop on Computational Electronics, IWCE 2009
Country/Territory	China
City	Beijing
Period	27/05/09 → 29/05/09

Access to Document

10.1109/IWCE.2009.5091099

Cite this

Heigl, A., Schenk, A., & Wachutka, G. (2009). Correction to the Schenk model of band-to-band tunneling in silicon applied to the simulation of nanowire tunneling transistors. In Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009 Article 5091099 (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009). https://doi.org/10.1109/IWCE.2009.5091099

Heigl, Alexander ; Schenk, Andreas ; Wachutka, Gerhard. / Correction to the Schenk model of band-to-band tunneling in silicon applied to the simulation of nanowire tunneling transistors. Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 2009. (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009).

@inproceedings{b8c611e96f1a4eecbb4b6f09e543e697,

title = "Correction to the Schenk model of band-to-band tunneling in silicon applied to the simulation of nanowire tunneling transistors",

abstract = "We found out that the standard form of Schenk's model of band-to-band tunneling in silicon [1] involves a poor approximation of the Airy-Integral and, therefore, overestimates the channel currents of realistic tunneling devices. In this paper we propose a better approximation resulting in a corrected form of the model, and we demonstrate its impact on the device characteristics of a tunneling transistor. Additionally, we investigated the influence of the corrected model on the local density correction and quantum confinement.",

author = "Alexander Heigl and Andreas Schenk and Gerhard Wachutka",

year = "2009",

doi = "10.1109/IWCE.2009.5091099",

language = "English",

isbn = "9781424439270",

series = "Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009",

booktitle = "Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009",

note = "2009 13th International Workshop on Computational Electronics, IWCE 2009 ; Conference date: 27-05-2009 Through 29-05-2009",

}

Heigl, A, Schenk, A & Wachutka, G 2009, Correction to the Schenk model of band-to-band tunneling in silicon applied to the simulation of nanowire tunneling transistors. in Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009., 5091099, Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009, 2009 13th International Workshop on Computational Electronics, IWCE 2009, Beijing, China, 27/05/09. https://doi.org/10.1109/IWCE.2009.5091099

Correction to the Schenk model of band-to-band tunneling in silicon applied to the simulation of nanowire tunneling transistors. / Heigl, Alexander; Schenk, Andreas; Wachutka, Gerhard.
Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 2009. 5091099 (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Correction to the Schenk model of band-to-band tunneling in silicon applied to the simulation of nanowire tunneling transistors

AU - Heigl, Alexander

AU - Schenk, Andreas

AU - Wachutka, Gerhard

PY - 2009

Y1 - 2009

N2 - We found out that the standard form of Schenk's model of band-to-band tunneling in silicon [1] involves a poor approximation of the Airy-Integral and, therefore, overestimates the channel currents of realistic tunneling devices. In this paper we propose a better approximation resulting in a corrected form of the model, and we demonstrate its impact on the device characteristics of a tunneling transistor. Additionally, we investigated the influence of the corrected model on the local density correction and quantum confinement.

AB - We found out that the standard form of Schenk's model of band-to-band tunneling in silicon [1] involves a poor approximation of the Airy-Integral and, therefore, overestimates the channel currents of realistic tunneling devices. In this paper we propose a better approximation resulting in a corrected form of the model, and we demonstrate its impact on the device characteristics of a tunneling transistor. Additionally, we investigated the influence of the corrected model on the local density correction and quantum confinement.

UR - https://www.scopus.com/pages/publications/70350215806

U2 - 10.1109/IWCE.2009.5091099

DO - 10.1109/IWCE.2009.5091099

M3 - Conference contribution

AN - SCOPUS:70350215806

SN - 9781424439270

T3 - Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

BT - Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

T2 - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Y2 - 27 May 2009 through 29 May 2009

ER -

Heigl A, Schenk A, Wachutka G. Correction to the Schenk model of band-to-band tunneling in silicon applied to the simulation of nanowire tunneling transistors. In Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 2009. 5091099. (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009). doi: 10.1109/IWCE.2009.5091099

Correction to the Schenk model of band-to-band tunneling in silicon applied to the simulation of nanowire tunneling transistors

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this