Controlled domain wall pinning in nanowires with perpendicular magnetic anisotropy by localized fringing fields

Stephan Breitkreutz; Irina Eichwald; Josef Kiermaier; Gaspard Hiblot; Gyorgy Csaba; Wolfgang Porod; Doris Schmitt-Landsiedel; Markus Becherer

doi:10.1063/1.4864737

Controlled domain wall pinning in nanowires with perpendicular magnetic anisotropy by localized fringing fields

Stephan Breitkreutz, Irina Eichwald, Josef Kiermaier, Gaspard Hiblot, Gyorgy Csaba, Wolfgang Porod, Doris Schmitt-Landsiedel, Markus Becherer

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A novel approach to directly control the domain wall (DW) pinning in a magnetic wire with perpendicular anisotropy is presented. Propagating DWs are blocked in a notch by the fringing fields of nearby gate magnets. Theoretical calculations of controlled DW pinning are confirmed by micromagnetic simulations. Experiments using magnetic force microscopy (MFM) and magneto-optical microscopy prove the functionality of the device. The presented structure enables to control the DW propagation in magnetic interconnects in order to store and buffer magnetic domains and hence, to directly control the signal flow in magnetic logic circuitry.

Original language	English
Article number	17D506
Journal	Journal of Applied Physics
Volume	115
Issue number	17
DOIs	https://doi.org/10.1063/1.4864737
State	Published - 7 May 2014

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abstract = "A novel approach to directly control the domain wall (DW) pinning in a magnetic wire with perpendicular anisotropy is presented. Propagating DWs are blocked in a notch by the fringing fields of nearby gate magnets. Theoretical calculations of controlled DW pinning are confirmed by micromagnetic simulations. Experiments using magnetic force microscopy (MFM) and magneto-optical microscopy prove the functionality of the device. The presented structure enables to control the DW propagation in magnetic interconnects in order to store and buffer magnetic domains and hence, to directly control the signal flow in magnetic logic circuitry.",

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AU - Breitkreutz, Stephan

AU - Eichwald, Irina

AU - Kiermaier, Josef

AU - Hiblot, Gaspard

AU - Csaba, Gyorgy

AU - Porod, Wolfgang

AU - Schmitt-Landsiedel, Doris

AU - Becherer, Markus

PY - 2014/5/7

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N2 - A novel approach to directly control the domain wall (DW) pinning in a magnetic wire with perpendicular anisotropy is presented. Propagating DWs are blocked in a notch by the fringing fields of nearby gate magnets. Theoretical calculations of controlled DW pinning are confirmed by micromagnetic simulations. Experiments using magnetic force microscopy (MFM) and magneto-optical microscopy prove the functionality of the device. The presented structure enables to control the DW propagation in magnetic interconnects in order to store and buffer magnetic domains and hence, to directly control the signal flow in magnetic logic circuitry.

AB - A novel approach to directly control the domain wall (DW) pinning in a magnetic wire with perpendicular anisotropy is presented. Propagating DWs are blocked in a notch by the fringing fields of nearby gate magnets. Theoretical calculations of controlled DW pinning are confirmed by micromagnetic simulations. Experiments using magnetic force microscopy (MFM) and magneto-optical microscopy prove the functionality of the device. The presented structure enables to control the DW propagation in magnetic interconnects in order to store and buffer magnetic domains and hence, to directly control the signal flow in magnetic logic circuitry.

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VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Controlled domain wall pinning in nanowires with perpendicular magnetic anisotropy by localized fringing fields

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