Continuous wave vertical cavity surface emitting lasers at 2.5 μ m with InP-based type-II quantum wells

S. Sprengel; A. Andrejew; F. Federer; G. K. Veerabathran; G. Boehm; M. C. Amann

doi:10.1063/1.4917282

Continuous wave vertical cavity surface emitting lasers at 2.5 μ m with InP-based type-II quantum wells

S. Sprengel, A. Andrejew, F. Federer, G. K. Veerabathran, G. Boehm, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A concept for electrically pumped vertical cavity surface emitting lasers (VCSEL) for emission wavelength beyond 2μm is presented. This concept integrates type-II quantum wells into InP-based VCSELs with a buried tunnel junction as current aperture. The W-shaped quantum wells are based on the type-II band alignment between GaInAs and GaAsSb. The structure includes an epitaxial GaInAs/InP and an amorphous AlF₃/ZnS distributed Bragg reflector as bottom and top (outcoupling) mirror, respectively. Continuous-wave operation up to 10°C at a wavelength of 2.49μm and a peak output power of 400μW at -18°C has been achieved. Single-mode emission with a side-mode suppression ratio of 30dB for mesa diameters up to 14μm is presented. The long emission wavelength and current tunability over a wavelength range of more than 5nm combined with its single-mode operation makes this device ideally suited for spectroscopy applications.

Original language	English
Article number	151102
Journal	Applied Physics Letters
Volume	106
Issue number	15
DOIs	https://doi.org/10.1063/1.4917282
State	Published - 13 Apr 2015

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title = "Continuous wave vertical cavity surface emitting lasers at 2.5 μ m with InP-based type-II quantum wells",

abstract = "A concept for electrically pumped vertical cavity surface emitting lasers (VCSEL) for emission wavelength beyond 2μm is presented. This concept integrates type-II quantum wells into InP-based VCSELs with a buried tunnel junction as current aperture. The W-shaped quantum wells are based on the type-II band alignment between GaInAs and GaAsSb. The structure includes an epitaxial GaInAs/InP and an amorphous AlF3/ZnS distributed Bragg reflector as bottom and top (outcoupling) mirror, respectively. Continuous-wave operation up to 10°C at a wavelength of 2.49μm and a peak output power of 400μW at -18°C has been achieved. Single-mode emission with a side-mode suppression ratio of 30dB for mesa diameters up to 14μm is presented. The long emission wavelength and current tunability over a wavelength range of more than 5nm combined with its single-mode operation makes this device ideally suited for spectroscopy applications.",

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T1 - Continuous wave vertical cavity surface emitting lasers at 2.5 μ m with InP-based type-II quantum wells

AU - Sprengel, S.

AU - Andrejew, A.

AU - Federer, F.

AU - Veerabathran, G. K.

AU - Boehm, G.

AU - Amann, M. C.

PY - 2015/4/13

Y1 - 2015/4/13

N2 - A concept for electrically pumped vertical cavity surface emitting lasers (VCSEL) for emission wavelength beyond 2μm is presented. This concept integrates type-II quantum wells into InP-based VCSELs with a buried tunnel junction as current aperture. The W-shaped quantum wells are based on the type-II band alignment between GaInAs and GaAsSb. The structure includes an epitaxial GaInAs/InP and an amorphous AlF3/ZnS distributed Bragg reflector as bottom and top (outcoupling) mirror, respectively. Continuous-wave operation up to 10°C at a wavelength of 2.49μm and a peak output power of 400μW at -18°C has been achieved. Single-mode emission with a side-mode suppression ratio of 30dB for mesa diameters up to 14μm is presented. The long emission wavelength and current tunability over a wavelength range of more than 5nm combined with its single-mode operation makes this device ideally suited for spectroscopy applications.

AB - A concept for electrically pumped vertical cavity surface emitting lasers (VCSEL) for emission wavelength beyond 2μm is presented. This concept integrates type-II quantum wells into InP-based VCSELs with a buried tunnel junction as current aperture. The W-shaped quantum wells are based on the type-II band alignment between GaInAs and GaAsSb. The structure includes an epitaxial GaInAs/InP and an amorphous AlF3/ZnS distributed Bragg reflector as bottom and top (outcoupling) mirror, respectively. Continuous-wave operation up to 10°C at a wavelength of 2.49μm and a peak output power of 400μW at -18°C has been achieved. Single-mode emission with a side-mode suppression ratio of 30dB for mesa diameters up to 14μm is presented. The long emission wavelength and current tunability over a wavelength range of more than 5nm combined with its single-mode operation makes this device ideally suited for spectroscopy applications.

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Continuous wave vertical cavity surface emitting lasers at 2.5 μ m with InP-based type-II quantum wells

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