Continuous-wave GaInAsSb/AlGaAsSb type-I double quantum well lasers for 2.6 μm wavelength

M. Grau; C. Lin; O. Dier; M. C. Amann

doi:10.1049/el:20031216

Continuous-wave GaInAsSb/AlGaAsSb type-I double quantum well lasers for 2.6 μm wavelength

M. Grau
, C. Lin
, O. Dier
, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

GaInAsSb/AlGaAsSb type-I lasers with a long emission wavelength are presented. The double quantum well lasers with a highly strained active region operate in continuous-wave mode at room temperature with a wavelength of 2.96 μm. The lasers operate in pulsed mode up to 55°C and show an extrapolated threshold current density of 118 A/cm² per quantum well.

Original language	English
Pages (from-to)	1816-1817
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	25
DOIs	https://doi.org/10.1049/el:20031216
State	Published - 11 Dec 2003

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10.1049/el:20031216

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@article{108d4455570d4e0194ef3751ea31915f,

title = "Continuous-wave GaInAsSb/AlGaAsSb type-I double quantum well lasers for 2.6 μm wavelength",

abstract = "GaInAsSb/AlGaAsSb type-I lasers with a long emission wavelength are presented. The double quantum well lasers with a highly strained active region operate in continuous-wave mode at room temperature with a wavelength of 2.96 μm. The lasers operate in pulsed mode up to 55°C and show an extrapolated threshold current density of 118 A/cm2 per quantum well.",

author = "M. Grau and C. Lin and O. Dier and Amann, \{M. C.\}",

year = "2003",

month = dec,

day = "11",

doi = "10.1049/el:20031216",

language = "English",

volume = "39",

pages = "1816--1817",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "25",

}

TY - JOUR

T1 - Continuous-wave GaInAsSb/AlGaAsSb type-I double quantum well lasers for 2.6 μm wavelength

AU - Grau, M.

AU - Lin, C.

AU - Dier, O.

AU - Amann, M. C.

PY - 2003/12/11

Y1 - 2003/12/11

N2 - GaInAsSb/AlGaAsSb type-I lasers with a long emission wavelength are presented. The double quantum well lasers with a highly strained active region operate in continuous-wave mode at room temperature with a wavelength of 2.96 μm. The lasers operate in pulsed mode up to 55°C and show an extrapolated threshold current density of 118 A/cm2 per quantum well.

AB - GaInAsSb/AlGaAsSb type-I lasers with a long emission wavelength are presented. The double quantum well lasers with a highly strained active region operate in continuous-wave mode at room temperature with a wavelength of 2.96 μm. The lasers operate in pulsed mode up to 55°C and show an extrapolated threshold current density of 118 A/cm2 per quantum well.

UR - https://www.scopus.com/pages/publications/0347022745

U2 - 10.1049/el:20031216

DO - 10.1049/el:20031216

M3 - Article

AN - SCOPUS:0347022745

SN - 0013-5194

VL - 39

SP - 1816

EP - 1817

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Continuous-wave GaInAsSb/AlGaAsSb type-I double quantum well lasers for 2.6 μm wavelength

Abstract

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