Confinement and interaction of single indirect excitons in a voltage-controlled trap formed inside double InGaAs quantum wells

G. J. Schinner; J. Repp; E. Schubert; A. K. Rai; D. Reuter; A. D. Wieck; A. O. Govorov; A. W. Holleitner; J. P. Kotthaus

doi:10.1103/PhysRevLett.110.127403

Confinement and interaction of single indirect excitons in a voltage-controlled trap formed inside double InGaAs quantum wells

G. J. Schinner, J. Repp, E. Schubert, A. K. Rai, D. Reuter, A. D. Wieck, A. O. Govorov, A. W. Holleitner, J. P. Kotthaus

Chair of Nanotechnology and Nanomaterials

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72 Scopus citations

Abstract

Voltage-tunable quantum traps confining individual spatially indirect and long-living excitons are realized by providing a coupled double quantum well with nanoscale gates. This enables us to study the transition from confined multiexcitons down to a single, electrostatically trapped indirect exciton. In the few exciton regime, we observe discrete emission lines identified as resulting from a single dipolar exciton, a biexciton, and a triexciton, respectively. Their energetic splitting is well described by Wigner-like molecular structures reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization.

Original language	English
Article number	127403
Journal	Physical Review Letters
Volume	110
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevLett.110.127403
State	Published - 19 Mar 2013

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10.1103/PhysRevLett.110.127403

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abstract = "Voltage-tunable quantum traps confining individual spatially indirect and long-living excitons are realized by providing a coupled double quantum well with nanoscale gates. This enables us to study the transition from confined multiexcitons down to a single, electrostatically trapped indirect exciton. In the few exciton regime, we observe discrete emission lines identified as resulting from a single dipolar exciton, a biexciton, and a triexciton, respectively. Their energetic splitting is well described by Wigner-like molecular structures reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization.",

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AU - Repp, J.

AU - Schubert, E.

AU - Rai, A. K.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Govorov, A. O.

AU - Holleitner, A. W.

AU - Kotthaus, J. P.

PY - 2013/3/19

Y1 - 2013/3/19

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AB - Voltage-tunable quantum traps confining individual spatially indirect and long-living excitons are realized by providing a coupled double quantum well with nanoscale gates. This enables us to study the transition from confined multiexcitons down to a single, electrostatically trapped indirect exciton. In the few exciton regime, we observe discrete emission lines identified as resulting from a single dipolar exciton, a biexciton, and a triexciton, respectively. Their energetic splitting is well described by Wigner-like molecular structures reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization.

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Confinement and interaction of single indirect excitons in a voltage-controlled trap formed inside double InGaAs quantum wells

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