Confined optical modes in short period (110) Si/Ge superlattices

E. Friess; H. Brugger; K. Eberl; G. Krötz; G. Abstreiter

doi:10.1016/0038-1098(89)90929-0

Confined optical modes in short period (110) Si/Ge superlattices

E. Friess
, H. Brugger
, K. Eberl
, G. Krötz
, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Raman spectroscopy is used to study the optical phonon properties of Si/Ge strained layer superlattices grown on (110) Ge buffers. Built in biaxial strain leads to an energetic shift and splitting of the two TO phonon branches. Narrow layered structures give rise to the formation of optical confined modes which are observed up to the third order.

Original language	English
Pages (from-to)	899-903
Number of pages	5
Journal	Solid State Communications
Volume	69
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(89)90929-0
State	Published - Mar 1989

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title = "Confined optical modes in short period (110) Si/Ge superlattices",

abstract = "Raman spectroscopy is used to study the optical phonon properties of Si/Ge strained layer superlattices grown on (110) Ge buffers. Built in biaxial strain leads to an energetic shift and splitting of the two TO phonon branches. Narrow layered structures give rise to the formation of optical confined modes which are observed up to the third order.",

author = "E. Friess and H. Brugger and K. Eberl and G. Kr{\"o}tz and G. Abstreiter",

year = "1989",

month = mar,

doi = "10.1016/0038-1098(89)90929-0",

language = "English",

volume = "69",

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journal = "Solid State Communications",

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T1 - Confined optical modes in short period (110) Si/Ge superlattices

AU - Friess, E.

AU - Brugger, H.

AU - Eberl, K.

AU - Krötz, G.

AU - Abstreiter, G.

PY - 1989/3

Y1 - 1989/3

N2 - Raman spectroscopy is used to study the optical phonon properties of Si/Ge strained layer superlattices grown on (110) Ge buffers. Built in biaxial strain leads to an energetic shift and splitting of the two TO phonon branches. Narrow layered structures give rise to the formation of optical confined modes which are observed up to the third order.

AB - Raman spectroscopy is used to study the optical phonon properties of Si/Ge strained layer superlattices grown on (110) Ge buffers. Built in biaxial strain leads to an energetic shift and splitting of the two TO phonon branches. Narrow layered structures give rise to the formation of optical confined modes which are observed up to the third order.

UR - https://www.scopus.com/pages/publications/0024630063

U2 - 10.1016/0038-1098(89)90929-0

DO - 10.1016/0038-1098(89)90929-0

M3 - Article

AN - SCOPUS:0024630063

SN - 0038-1098

VL - 69

SP - 899

EP - 903

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Confined optical modes in short period (110) Si/Ge superlattices

Abstract

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