Confined Ni film on a Pd/Si(111)-(√3 × √3)R30° surface: Spatially resolved XPS study of the surface reactions

L. Casalis, L. Gregoratti, S. Günther, J. Kovac, M. Kiskinova

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We used scanning photoelectron microscopy with lateral resolution of 0.15 μm to study the interactions of a (√3 × √3)R30°-Pd/Si(111) surface with a rectangular 2 ML Ni film deposited at 300 K and after stepwise annealing to 1120 K. The evolution in the surface composition and electronic structure inside, outside and across the edge of the Ni film was examined by mapping the lateral changes of the valence band, Ni 3p, Si 2p and Pd 3d core levels. The results showed that up to 780 K the changes at both interfaces are determined by temperature-induced interactions leading to formation of new silicide phases. Edge effects at the forefront of the patch are identified and the composition of microscopic three-dimensional silicide islands formed after annealing to 1120 K is determined as well.

Original languageEnglish
Pages (from-to)191-200
Number of pages10
JournalSurface Science
Volume453
Issue number1-3
DOIs
StatePublished - 10 May 2000
Externally publishedYes

Keywords

  • Metal-semiconductor interfaces
  • Nickel
  • Palladium
  • Scanning electron microscopy (SEM)
  • Surface chemical reaction
  • Surface structure, morphology, roughness, and topography

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