@inproceedings{8c1dd6633a34415c8764e6729f6f8ee7,
title = "Concepts for long wavelength VCSELs above 2μm",
abstract = "We present different concepts for long wavelength buried tunnel junction VCSELs for the spectroscopically important range above 2 μm. This includes GaSb-based laser using GaInAsSb quantum wells, InP-based lasers with V-shaped quantum wells and InP-based lasers using type-II quantum wells. For InP-based devices, emission wavelengths up to 2.36 μm are presented, with single-mode output powers of roughly 500 μW and side-mode suppression ratios of more than 30 dB. GaSb-based VCSELs are presented with single-mode emission at 2.6 μm, a side-mode suppression ratio of more than 20 dB and a peak output power of 400 μW.",
keywords = "GaSb, InP, VCSEL, semiconductor laser, tunnel junction, type-II quantum well, vertical cavity surface emitting laser",
author = "Stephan Sprengel and Amann, {Markus Christian}",
note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; Vertical-Cavity Surface-Emitting Lasers XIX ; Conference date: 11-02-2015 Through 12-02-2015",
year = "2015",
doi = "10.1117/12.2083218",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Choquette, {Kent D.} and Chun Lei",
booktitle = "Vertical-Cavity Surface-Emitting Lasers XIX",
}