Concepts for long wavelength VCSELs above 2μm

Stephan Sprengel, Markus Christian Amann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We present different concepts for long wavelength buried tunnel junction VCSELs for the spectroscopically important range above 2 μm. This includes GaSb-based laser using GaInAsSb quantum wells, InP-based lasers with V-shaped quantum wells and InP-based lasers using type-II quantum wells. For InP-based devices, emission wavelengths up to 2.36 μm are presented, with single-mode output powers of roughly 500 μW and side-mode suppression ratios of more than 30 dB. GaSb-based VCSELs are presented with single-mode emission at 2.6 μm, a side-mode suppression ratio of more than 20 dB and a peak output power of 400 μW.

Original languageEnglish
Title of host publicationVertical-Cavity Surface-Emitting Lasers XIX
EditorsKent D. Choquette, Chun Lei
ISBN (Electronic)9781628414714
StatePublished - 2015
EventVertical-Cavity Surface-Emitting Lasers XIX - San Francisco, United States
Duration: 11 Feb 201512 Feb 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceVertical-Cavity Surface-Emitting Lasers XIX
Country/TerritoryUnited States
CitySan Francisco


  • GaSb
  • InP
  • semiconductor laser
  • tunnel junction
  • type-II quantum well
  • vertical cavity surface emitting laser


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