Comprehensive study of the electrothermal operation of SiC power devices using a fully coupled physical transport model

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Original language	English
Pages (from-to)	T151-T1512
Journal	Materials Research Society Symposium - Proceedings
Volume	622
DOIs	https://doi.org/10.1557/proc-622-t1.5.1
State	Published - 2000
Event	Wide-Bandgap Electronic Devices - San Francisco, CA, United States Duration: 24 Apr 2000 → 27 Apr 2000

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@article{3564151a16b84018a721c5c9e5e92ef9,

title = "Comprehensive study of the electrothermal operation of SiC power devices using a fully coupled physical transport model",

author = "M. Lades and W. Kaindl and G. Wachutka",

year = "2000",

doi = "10.1557/proc-622-t1.5.1",

language = "English",

volume = "622",

pages = "T151--T1512",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Wide-Bandgap Electronic Devices ; Conference date: 24-04-2000 Through 27-04-2000",

}

TY - JOUR

T1 - Comprehensive study of the electrothermal operation of SiC power devices using a fully coupled physical transport model

AU - Lades, M.

AU - Kaindl, W.

AU - Wachutka, G.

PY - 2000

Y1 - 2000

UR - https://www.scopus.com/pages/publications/0034428588

U2 - 10.1557/proc-622-t1.5.1

DO - 10.1557/proc-622-t1.5.1

M3 - Conference article

AN - SCOPUS:0034428588

SN - 0272-9172

VL - 622

SP - T151-T1512

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Wide-Bandgap Electronic Devices

Y2 - 24 April 2000 through 27 April 2000

ER -