Comprehensive analysis of SiC power devices using a fully coupled physical transport model

Keyphrases

• Transport Model 100%
• Physical Transport 100%
• SiC Power Device 100%
• Impurities 50%
• Material Parameters 50%
• Coupling Effect 50%
• Thermoelectric Properties 50%
• Consistent Set 50%
• Power Device 50%
• Impact Ionization 50%
• Dynamic Action 50%
• Switching Condition 50%
• 4H-SiC 50%
• Drift-diffusion Model 50%
• 6H-SiC 50%
• Reverse Blocking 50%
• Ionized Impurity 50%

Engineering

• Power Device 100%
• Transients 33%
• Material Parameter 33%
• Numerical Study 33%
• Diffusion Model 33%
• Impact Ionization 33%