@inproceedings{d0e8c86ee58749f4ae967ef99afb0f80,
title = "Comprehensive analysis of SiC power devices using a fully coupled physical transport model",
abstract = "We formulated an extended electrothermal drift-diffusion model including the dynamic action of incompletely ionized impurities and validated the model by deriving a consistent set of material parameters for 4H- and 6H-SiC power devices. On this basis we performed detailed numerical studies of the coupled effects between transient impurity kinetics and impact ionization, which may alter the reverse blocking characteristics of power devices under short switching conditions.",
author = "G. Wachutka and M. Lades and W. Kaindl",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 ; Conference date: 16-10-2000 Through 18-10-2000",
year = "2000",
doi = "10.1109/ASDAM.2000.889446",
language = "English",
series = "ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "29--33",
editor = "Jan Kuzmik and Jozef Osvald and Stefan Hascik and Juraj Breza",
booktitle = "ASDAM 2000 - Conference Proceedings",
}