Comprehensive analysis of SiC power devices using a fully coupled physical transport model

G. Wachutka, M. Lades, W. Kaindl

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We formulated an extended electrothermal drift-diffusion model including the dynamic action of incompletely ionized impurities and validated the model by deriving a consistent set of material parameters for 4H- and 6H-SiC power devices. On this basis we performed detailed numerical studies of the coupled effects between transient impurity kinetics and impact ionization, which may alter the reverse blocking characteristics of power devices under short switching conditions.

Original languageEnglish
Title of host publicationASDAM 2000 - Conference Proceedings
Subtitle of host publication3rd International EuroConference on Advanced Semiconductor Devices and Microsystems
EditorsJan Kuzmik, Jozef Osvald, Stefan Hascik, Juraj Breza
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages29-33
Number of pages5
ISBN (Electronic)0780359399, 9780780359390
DOIs
StatePublished - 2000
Event3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 - Smolenice, Slovakia
Duration: 16 Oct 200018 Oct 2000

Publication series

NameASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

Conference

Conference3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003
Country/TerritorySlovakia
CitySmolenice
Period16/10/0018/10/00

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