Comprehensive analysis of electricallypumped GaSb-based VCSELs

S. Arafin, A. Bachmann, K. Vizbaras, A. Hangauer, J. Gustavsson, J. Bengtsson, A. Larsson, M. C. Amann

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


This paper discusses several performance-related aspects of electrically-pumped GaSb-based buried tunnel junction VCSELs with an emission wavelength of 2.6 μm based on theoretical and experimental results. These results allow a deeper insight into the internal device physics, such as radial diffusion of carriers, maximum continuous-wave operating temperature, diffraction loss, internal temperature, gain and loss parameters, internal quantum efficiency of the active region etc. These parameters can be taken into account while designing mid-infrared lasers which leads to an improved device performance. A simple thermal model of the devices based on the two-dimensional (2-D) finite element method using the material data from the literature is also presented. In addition, an application-based result utilizing these lasers for the measurement of absolute water vapor concentration by wavelength modulation spectroscopy (WMS) method are also described, hinting that devices are well-suited for the targeted sensing applications.

Original languageEnglish
Pages (from-to)17267-17282
Number of pages16
JournalOptics Express
Issue number18
StatePublished - 29 Aug 2011


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