Compositional tuning of ferromagnetism in Ga1-xMnxP

R. Farshchi; M. A. Scarpulla; P. R. Stone; K. M. Yu; I. D. Sharp; J. W. Beeman; H. H. Silvestri; L. A. Reichertz; E. E. Haller; O. D. Dubon

doi:10.1016/j.ssc.2006.09.010

Compositional tuning of ferromagnetism in Ga_1-xMn_xP

R. Farshchi, M. A. Scarpulla, P. R. Stone, K. M. Yu, I. D. Sharp, J. W. Beeman, H. H. Silvestri, L. A. Reichertz, E. E. Haller, O. D. Dubon

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report the magnetic and transport properties of Ga_1-xMn_xP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018-0.042. Like Ga_1-xMn_xAs, Ga_1-xMn_xP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 ^{{ring operator}}C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga_1-xMn_xAs, Ga_1-xMn_xP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x.

Original language	English
Pages (from-to)	443-446
Number of pages	4
Journal	Solid State Communications
Volume	140
Issue number	9-10
DOIs	https://doi.org/10.1016/j.ssc.2006.09.010
State	Published - Dec 2006
Externally published	Yes

Keywords

A. Ferromagnetic semiconductors
B. Laser processing
C. Impurities in semiconductors

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10.1016/j.ssc.2006.09.010

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@article{45046123143544ceb09012a1a68b05d7,

title = "Compositional tuning of ferromagnetism in Ga1-xMnxP",

abstract = "We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018-0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 {ring operator}C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x.",

keywords = "A. Ferromagnetic semiconductors, B. Laser processing, C. Impurities in semiconductors",

author = "R. Farshchi and Scarpulla, {M. A.} and Stone, {P. R.} and Yu, {K. M.} and Sharp, {I. D.} and Beeman, {J. W.} and Silvestri, {H. H.} and Reichertz, {L. A.} and Haller, {E. E.} and Dubon, {O. D.}",

note = "Funding Information: This work is supported by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. P.R.S. acknowledges support from an NDSEG Fellowship.",

year = "2006",

month = dec,

doi = "10.1016/j.ssc.2006.09.010",

language = "English",

volume = "140",

pages = "443--446",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "9-10",

}

TY - JOUR

T1 - Compositional tuning of ferromagnetism in Ga1-xMnxP

AU - Farshchi, R.

AU - Scarpulla, M. A.

AU - Stone, P. R.

AU - Yu, K. M.

AU - Sharp, I. D.

AU - Beeman, J. W.

AU - Silvestri, H. H.

AU - Reichertz, L. A.

AU - Haller, E. E.

AU - Dubon, O. D.

N1 - Funding Information: This work is supported by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. P.R.S. acknowledges support from an NDSEG Fellowship.

PY - 2006/12

Y1 - 2006/12

N2 - We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018-0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 {ring operator}C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x.

AB - We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018-0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 {ring operator}C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x.

KW - A. Ferromagnetic semiconductors

KW - B. Laser processing

KW - C. Impurities in semiconductors

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U2 - 10.1016/j.ssc.2006.09.010

DO - 10.1016/j.ssc.2006.09.010

M3 - Article

AN - SCOPUS:33750326201

SN - 0038-1098

VL - 140

SP - 443

EP - 446

JO - Solid State Communications

JF - Solid State Communications

IS - 9-10

ER -

Compositional tuning of ferromagnetism in Ga_1-xMn_xP

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