Compositional tuning of ferromagnetism in Ga1-xMnxP

R. Farshchi, M. A. Scarpulla, P. R. Stone, K. M. Yu, I. D. Sharp, J. W. Beeman, H. H. Silvestri, L. A. Reichertz, E. E. Haller, O. D. Dubon

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10 Scopus citations


We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018-0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 {ring operator}C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x.

Original languageEnglish
Pages (from-to)443-446
Number of pages4
JournalSolid State Communications
Issue number9-10
StatePublished - Dec 2006
Externally publishedYes


  • A. Ferromagnetic semiconductors
  • B. Laser processing
  • C. Impurities in semiconductors


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