Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy

N. Wieser; O. Ambacher; H. P. Felsl; L. Görgens; M. Stutzmann

doi:10.1063/1.124243

Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy

N. Wieser, O. Ambacher, H. P. Felsl, L. Görgens, M. Stutzmann

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

A GaN/GaInN/GaN double heterostructure was grown by plasma-induced MBE on a sapphire substrate. The compositional inhomogeneity of the GaInN film was investigated by combined excitation of selective photoluminescence and Raman scattering. A significant dependence of both the observed luminescence and the specific accompanying resonant Raman lines on the excitation energy indicates considerable compositional inhomogeneity. A correlation was found on the relative strengths of two longitudinal optical Raman bands and the relative efficiency of the luminescence with the absorbance obtained from photothermal deflection spectroscopy.

Original language	English
Pages (from-to)	3981-3983
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	26
DOIs	https://doi.org/10.1063/1.124243
State	Published - 28 Jun 1999

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title = "Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy",

abstract = "A GaN/GaInN/GaN double heterostructure was grown by plasma-induced MBE on a sapphire substrate. The compositional inhomogeneity of the GaInN film was investigated by combined excitation of selective photoluminescence and Raman scattering. A significant dependence of both the observed luminescence and the specific accompanying resonant Raman lines on the excitation energy indicates considerable compositional inhomogeneity. A correlation was found on the relative strengths of two longitudinal optical Raman bands and the relative efficiency of the luminescence with the absorbance obtained from photothermal deflection spectroscopy.",

author = "N. Wieser and O. Ambacher and Felsl, {H. P.} and L. G{\"o}rgens and M. Stutzmann",

year = "1999",

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T1 - Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy

AU - Wieser, N.

AU - Ambacher, O.

AU - Felsl, H. P.

AU - Görgens, L.

AU - Stutzmann, M.

PY - 1999/6/28

Y1 - 1999/6/28

N2 - A GaN/GaInN/GaN double heterostructure was grown by plasma-induced MBE on a sapphire substrate. The compositional inhomogeneity of the GaInN film was investigated by combined excitation of selective photoluminescence and Raman scattering. A significant dependence of both the observed luminescence and the specific accompanying resonant Raman lines on the excitation energy indicates considerable compositional inhomogeneity. A correlation was found on the relative strengths of two longitudinal optical Raman bands and the relative efficiency of the luminescence with the absorbance obtained from photothermal deflection spectroscopy.

AB - A GaN/GaInN/GaN double heterostructure was grown by plasma-induced MBE on a sapphire substrate. The compositional inhomogeneity of the GaInN film was investigated by combined excitation of selective photoluminescence and Raman scattering. A significant dependence of both the observed luminescence and the specific accompanying resonant Raman lines on the excitation energy indicates considerable compositional inhomogeneity. A correlation was found on the relative strengths of two longitudinal optical Raman bands and the relative efficiency of the luminescence with the absorbance obtained from photothermal deflection spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=0032614049&partnerID=8YFLogxK

U2 - 10.1063/1.124243

DO - 10.1063/1.124243

M3 - Article

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VL - 74

SP - 3981

EP - 3983

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy

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