Composition analysis using elastic recoil detection

L. Görgens; G. Dollinger; A. Bergmaier; O. Ambacher; L. Eastman; J. A. Smart; J. F. Shealy; R. Dimitrov; M. Stutzmann; A. Mitchell

doi:10.1002/(SICI)1521-3951(199911)216:1<679::AID-PSSB679>3.0.CO;2-L

Composition analysis using elastic recoil detection

L. Görgens, G. Dollinger, A. Bergmaier, O. Ambacher, L. Eastman, J. A. Smart, J. F. Shealy, R. Dimitrov, M. Stutzmann, A. Mitchell

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

Abstract

We report quantitative ERD (Elastic Recoil Detection) measurements for the determination of the composition and distribution of the elements in nitride heterostructures. The investigated samples were MOCVD (molecular chemical vapor deposition) and PIMBE (plasma induced molecular beam epitaxy) grown HEMT (high electron mobility transistor) structures from Cornell University. We present the measured Al distribution parallel to the growth direction of Al_xGa₁ _xN layers of a thickness of about 10 to 30 nm and an Al concentration of x = 0.1 to 0.7. The results are compared with HRXRD (high resolution X-ray diffraction) measurements.

Original language	English
Pages (from-to)	679-682
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	216
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199911)216:1<679::AID-PSSB679>3.0.CO;2-L
State	Published - Nov 1999

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10.1002/(SICI)1521-3951(199911)216:1<679::AID-PSSB679>3.0.CO;2-L

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title = "Composition analysis using elastic recoil detection",

abstract = "We report quantitative ERD (Elastic Recoil Detection) measurements for the determination of the composition and distribution of the elements in nitride heterostructures. The investigated samples were MOCVD (molecular chemical vapor deposition) and PIMBE (plasma induced molecular beam epitaxy) grown HEMT (high electron mobility transistor) structures from Cornell University. We present the measured Al distribution parallel to the growth direction of AlxGa1 xN layers of a thickness of about 10 to 30 nm and an Al concentration of x = 0.1 to 0.7. The results are compared with HRXRD (high resolution X-ray diffraction) measurements.",

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T1 - Composition analysis using elastic recoil detection

AU - Görgens, L.

AU - Dollinger, G.

AU - Bergmaier, A.

AU - Ambacher, O.

AU - Eastman, L.

AU - Smart, J. A.

AU - Shealy, J. F.

AU - Dimitrov, R.

AU - Stutzmann, M.

AU - Mitchell, A.

PY - 1999/11

Y1 - 1999/11

N2 - We report quantitative ERD (Elastic Recoil Detection) measurements for the determination of the composition and distribution of the elements in nitride heterostructures. The investigated samples were MOCVD (molecular chemical vapor deposition) and PIMBE (plasma induced molecular beam epitaxy) grown HEMT (high electron mobility transistor) structures from Cornell University. We present the measured Al distribution parallel to the growth direction of AlxGa1 xN layers of a thickness of about 10 to 30 nm and an Al concentration of x = 0.1 to 0.7. The results are compared with HRXRD (high resolution X-ray diffraction) measurements.

AB - We report quantitative ERD (Elastic Recoil Detection) measurements for the determination of the composition and distribution of the elements in nitride heterostructures. The investigated samples were MOCVD (molecular chemical vapor deposition) and PIMBE (plasma induced molecular beam epitaxy) grown HEMT (high electron mobility transistor) structures from Cornell University. We present the measured Al distribution parallel to the growth direction of AlxGa1 xN layers of a thickness of about 10 to 30 nm and an Al concentration of x = 0.1 to 0.7. The results are compared with HRXRD (high resolution X-ray diffraction) measurements.

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JF - Physica Status Solidi (B) Basic Research

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Composition analysis using elastic recoil detection

Abstract

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