Comparison of P and Sb as n-dopants for Si molecular beam epitaxy

Keyphrases

• Molecular Beam Epitaxy 100%
• N Dopants 100%
• Temperature Range 50%
• Antimony 50%
• Desorption 50%
• Secondary Ion Mass Spectrometry 50%
• Capacitance-voltage 50%
• Phosphorus P 50%
• Electrochemical Capacitance 50%
• Full Temperature Range 50%
• Superior Properties 50%

Material Science

• Doping (Additives) 100%
• Molecular Beam Epitaxy 100%
• Desorption 50%
• Secondary Ion Mass Spectrometry 50%
• Antimony 50%
• Electrochemical Capacitance 50%