Comparison of P and Sb as n-dopants for Si molecular beam epitaxy

J. F. Nützel; G. Abstreiter

doi:10.1063/1.360286

Comparison of P and Sb as n-dopants for Si molecular beam epitaxy

J. F. Nützel, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Review article › peer-review

33 Scopus citations

Abstract

The incorporation properties segregation, activation, and desorption in Si molecular beam epitaxy of phosphorus (P) are investigated experimentally in comparison to antimony (Sb) over a temperature range from 300 to 900°C with Secondary Ion Mass Spectroscopy and electrochemical Capacitance/Voltage measurements. P exhibits superior properties over the full temperature range.

Original language	English
Pages (from-to)	937-940
Number of pages	4
Journal	Journal of Applied Physics
Volume	78
Issue number	2
DOIs	https://doi.org/10.1063/1.360286
State	Published - 1995

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title = "Comparison of P and Sb as n-dopants for Si molecular beam epitaxy",

abstract = "The incorporation properties segregation, activation, and desorption in Si molecular beam epitaxy of phosphorus (P) are investigated experimentally in comparison to antimony (Sb) over a temperature range from 300 to 900°C with Secondary Ion Mass Spectroscopy and electrochemical Capacitance/Voltage measurements. P exhibits superior properties over the full temperature range.",

author = "N{\"u}tzel, {J. F.} and G. Abstreiter",

year = "1995",

doi = "10.1063/1.360286",

language = "English",

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journal = "Journal of Applied Physics",

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T1 - Comparison of P and Sb as n-dopants for Si molecular beam epitaxy

AU - Nützel, J. F.

AU - Abstreiter, G.

PY - 1995

Y1 - 1995

N2 - The incorporation properties segregation, activation, and desorption in Si molecular beam epitaxy of phosphorus (P) are investigated experimentally in comparison to antimony (Sb) over a temperature range from 300 to 900°C with Secondary Ion Mass Spectroscopy and electrochemical Capacitance/Voltage measurements. P exhibits superior properties over the full temperature range.

AB - The incorporation properties segregation, activation, and desorption in Si molecular beam epitaxy of phosphorus (P) are investigated experimentally in comparison to antimony (Sb) over a temperature range from 300 to 900°C with Secondary Ion Mass Spectroscopy and electrochemical Capacitance/Voltage measurements. P exhibits superior properties over the full temperature range.

UR - http://www.scopus.com/inward/record.url?scp=0000903944&partnerID=8YFLogxK

U2 - 10.1063/1.360286

DO - 10.1063/1.360286

M3 - Review article

AN - SCOPUS:0000903944

SN - 0021-8979

VL - 78

SP - 937

EP - 940

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Comparison of P and Sb as n-dopants for Si molecular beam epitaxy

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