Abstract
Fully depleted SOI technologies require high quality substrates. In this work the properties of one full dose SIMOX and two different BESOI substrates were compared. Body thickness variation and threshold voltage variation, defect density, parasitic bipolar action and hot carrier reliability were evaluated using nMOS and pMOS transistors and MOS capacitors. Overall UNIBOND wafers are best suited as substrates for a fully depleted SOI CMOS technology.
| Original language | English |
|---|---|
| Pages (from-to) | 151-153 |
| Number of pages | 3 |
| Journal | Electron Technology (Warsaw) |
| Volume | 32 |
| Issue number | 1 |
| State | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1998 4th Symposium (Diagnostics and Yield: SOI-Materials, Devices and Characterization) - Warszawa, Pol Duration: 22 Apr 1998 → 24 Apr 1998 |