@inproceedings{26d4537ece574287a666df14ea1bf15d,
title = "Comparing Switching and Conduction Losses of Uni-and Bidirectional SiC Semiconductor Switches for AC Applications",
abstract = "The presented research elaborates on the increase in conduction and switching losses when combining two regular SiC MosFETs to one bidirectional switch. The conduction losses are expected to double due to two semiconductors conducting the current while the switching losses should increase since the loop inductance is increased. Both effects are directly investigated through extensive double pulse tests and conduction loss measurements. The measured conduction losses are significantly lower than expected while no increase in switching losses can be measured. These directly measured losses are further verified through efficiency measurements with a 15 kW dc-dc converter prototype.",
keywords = "Converter circuit, Double pulse tests, Power semiconductor device, Switching losses, Wide bandgap devices",
author = "Daniel Goldmann and Sebastian Mayer and Simon Schramm and Herzog, {Hans Georg}",
note = "Publisher Copyright: {\textcopyright} 2021 EPE Association.; 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe ; Conference date: 06-09-2021 Through 10-09-2021",
year = "2021",
month = sep,
day = "6",
language = "English",
series = "2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe",
}