Abstract
A study was performed on combined electron-beam lithography and atomic force microscopy used for the fabrication of variable-coupling quantum dots. The conventional electron-beam lithography was combined with direct nanofabrication by local anodic oxidation to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. It was found that the combination of both nanolithography methods allowed fabrication of robust in-plane gates.
Original language | English |
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Pages (from-to) | 1163-1165 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 6 |
DOIs | |
State | Published - 11 Aug 2003 |