TY - JOUR
T1 - Colloidal Continuous Injection Synthesis of Fluorescent MoX2(X = S, Se) Nanosheets as a First Step Toward Photonic Applications
AU - Pippia, Gabriele
AU - Rousaki, Anastasia
AU - Barbone, Matteo
AU - Billet, Jonas
AU - Brescia, Rosaria
AU - Polovitsyn, Anatolii
AU - Martín-García, Beatriz
AU - Prato, Mirko
AU - De Boni, Francesco
AU - Petrić, Marko M.
AU - Ben Mhenni, Amine
AU - Van Driessche, Isabel
AU - Vandenabeele, Peter
AU - Müller, Kai
AU - Moreels, Iwan
N1 - Publisher Copyright:
© 2022 American Chemical Society.
PY - 2022/8/26
Y1 - 2022/8/26
N2 - Transition-metal dichalcogenide (TMD) nanosheets have become an intensively investigated topic in the field of 2D nanomaterials, especially due to the direct semiconductor nature, and the broken inversion symmetry in the odd-layer number, of some of their family members. These properties make TMDs attractive for different technological applications such as photovoltaics, optoelectronics, valleytronics, and hydrogen evolution reactions. Among them, MoX2 (X = S and Se) are turned to direct gap when their thickness is thinned down to monolayer, and thus, efforts toward obtaining large-scale monolayer TMDs are crucial for technological applications. Colloidal synthesis of TMDs has been developed in recent years, as it provides a cost-efficient and scalable way to produce few-layer TMDs having homogeneous size and thickness, yet obtaining a monolayer has proven challenging. Here, we present a method for the colloidal synthesis of mono- and few-layer MoX2 (X = S and Se) using elemental chalcogenide and metal chloride as precursors. Using a synthesis with slow injection of the MoCl5 precursor under a nitrogen atmosphere, and optimizing the synthesis parameters with a design of experiments approach, we obtained a MoX2 sample with the semiconducting (1H) phase and optical band gaps of 1.96 eV for 1H-MoS2 and 1.67 eV for 1H-MoSe2, respectively, consistent with a large monolayer yield in the ensemble. Both display photoluminescence at cryogenic and room temperature, paving the way for optical spectroscopy studies and photonic applications of colloidal TMD nanosheets.
AB - Transition-metal dichalcogenide (TMD) nanosheets have become an intensively investigated topic in the field of 2D nanomaterials, especially due to the direct semiconductor nature, and the broken inversion symmetry in the odd-layer number, of some of their family members. These properties make TMDs attractive for different technological applications such as photovoltaics, optoelectronics, valleytronics, and hydrogen evolution reactions. Among them, MoX2 (X = S and Se) are turned to direct gap when their thickness is thinned down to monolayer, and thus, efforts toward obtaining large-scale monolayer TMDs are crucial for technological applications. Colloidal synthesis of TMDs has been developed in recent years, as it provides a cost-efficient and scalable way to produce few-layer TMDs having homogeneous size and thickness, yet obtaining a monolayer has proven challenging. Here, we present a method for the colloidal synthesis of mono- and few-layer MoX2 (X = S and Se) using elemental chalcogenide and metal chloride as precursors. Using a synthesis with slow injection of the MoCl5 precursor under a nitrogen atmosphere, and optimizing the synthesis parameters with a design of experiments approach, we obtained a MoX2 sample with the semiconducting (1H) phase and optical band gaps of 1.96 eV for 1H-MoS2 and 1.67 eV for 1H-MoSe2, respectively, consistent with a large monolayer yield in the ensemble. Both display photoluminescence at cryogenic and room temperature, paving the way for optical spectroscopy studies and photonic applications of colloidal TMD nanosheets.
KW - colloidal synthesis
KW - design of experiments
KW - molybdenum diselenide
KW - molybdenum disulfide
KW - transition metal dichalcogenide
UR - http://www.scopus.com/inward/record.url?scp=85135959427&partnerID=8YFLogxK
U2 - 10.1021/acsanm.2c01470
DO - 10.1021/acsanm.2c01470
M3 - Article
AN - SCOPUS:85135959427
SN - 2574-0970
VL - 5
SP - 10311
EP - 10320
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
IS - 8
ER -