CMOS-compatible silicon nanowire field-effect transistor biosensor: Technology development toward commercialization

Duy Phu Tran, Thuy Thi Thanh Pham, Bernhard Wolfrum, Andreas Offenhäusser, Benjamin Thierry

Research output: Contribution to journalReview articlepeer-review

89 Scopus citations


Owing to their two-dimensional confinements, silicon nanowires display remarkable optical, magnetic, and electronic properties. Of special interest has been the development of advanced biosensing approaches based on the field effect associated with silicon nanowires (SiNWs). Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications. A key requirement toward the fulfilment of SiNW FETs' promises in the bioanalytical field is their efficient integration within functional devices. Aiming to provide a comprehensive roadmap for the development of SiNW FET based sensing platforms, we critically review and discuss the key design and fabrication aspects relevant to their development and integration within complementary metal-oxide-semiconductor (CMOS) technology.

Original languageEnglish
Article number785
Issue number5
StatePublished - 11 May 2018


  • Biosensor
  • CMOS
  • Commercialization
  • Diagnostic
  • Field effect transistor
  • Micro/nanofabrication
  • Silicon nanowire


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