Clustering in a precipitate-free GeMn magnetic semiconductor

D. Bougeard; S. Ahlers; A. Trampert; N. Sircar; G. Abstreiter

doi:10.1103/PhysRevLett.97.237202

Clustering in a precipitate-free GeMn magnetic semiconductor

D. Bougeard, S. Ahlers, A. Trampert, N. Sircar, G. Abstreiter

Natural Sciences

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127 Scopus citations

Abstract

We present the first study relating structural parameters of precipitate-free Ge0.95Mn0.05 films to magnetization data. Nanometer-sized clustersâ€"areas with increased Mn content on substitutional lattice sites compared to the host matrixâ€"are detected in transmission electron microscopy analysis. The films show no overall spontaneous magnetization at all down to 2 K. The TEM and magnetization results are interpreted in terms of an assembly of superparamagnetic moments developing in the dense distribution of clusters. Each cluster individually turns ferromagnetic below an ordering temperature which depends on its volume and Mn content.

Original language	English
Article number	237202
Journal	Physical Review Letters
Volume	97
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevLett.97.237202
State	Published - 2006

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10.1103/PhysRevLett.97.237202

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AU - Bougeard, D.

AU - Ahlers, S.

AU - Trampert, A.

AU - Sircar, N.

AU - Abstreiter, G.

PY - 2006

Y1 - 2006

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AB - We present the first study relating structural parameters of precipitate-free Ge0.95Mn0.05 films to magnetization data. Nanometer-sized clustersâ€"areas with increased Mn content on substitutional lattice sites compared to the host matrixâ€"are detected in transmission electron microscopy analysis. The films show no overall spontaneous magnetization at all down to 2 K. The TEM and magnetization results are interpreted in terms of an assembly of superparamagnetic moments developing in the dense distribution of clusters. Each cluster individually turns ferromagnetic below an ordering temperature which depends on its volume and Mn content.

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Clustering in a precipitate-free GeMn magnetic semiconductor

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