Cleaved-edge-overgrowth nanogap electrodes

Sebastian M. Luber, Max Bichler, Gerhard Abstreiter, Marc Tornow

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We present a method to fabricate multiple metal nanogap electrodes of tailored width and distance in parallel, on the cleaved plane of a GaAs/AlGaAs heterostructure. The three-dimensional patterned structures are obtained by a combination of molecular-beam-epitaxial regrowth on a crystal facet, using the cleaved-edge-overgrowth (CEO) method, and subsequent wet selective etching and metallization steps. SEM and AFM studies reveal smooth and co-planar electrodes of width and distance of the order of 10 nm. Preliminary electrical characterization indicates electrical gap insulation in the 100 MΩ range with kΩ lead resistance. We propose our methodology to realize multiple electrode geometries that would allow investigation of the electrical conductivity of complex nanoscale objects such as branched organic molecules.

Original languageEnglish
Article number065301
Issue number6
StatePublished - 11 Feb 2011


Dive into the research topics of 'Cleaved-edge-overgrowth nanogap electrodes'. Together they form a unique fingerprint.

Cite this