Circular photogalvanic effect in SiGe semiconductor quantum wells

Sergey D. Ganichev; Franz Peter Kalz; Ulrich Rössler; Wilhelm Prettl; Eugenius L. Ivchenko; Vasily V. Bel'kov; Robert Neumann; Karl Brunner; Gerhard Abstreiter

Circular photogalvanic effect in SiGe semiconductor quantum wells

Sergey D. Ganichev, Franz Peter Kalz, Ulrich Rössler, Wilhelm Prettl, Eugenius L. Ivchenko, Vasily V. Bel'kov, Robert Neumann, Karl Brunner, Gerhard Abstreiter

University of Regensburg

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The photogalvanic effects, which require a system lacking inversion symmetry, become possible in SiGe based quantum well (QW) structures due to their built-in asymmetry. We report on observations of the circular and linear photogalvanic effects induced by infrared radiation in (001)- and (113)-oriented p-Si/Si_1-xGe_x QW structures and analyse these observations in view of the possible symmetry of these structures. The circular photogalvanic effect arises due to optical spin orientation of free carriers in QWs with band splitting in k-space which results in a directed motion of free carriers in the plane of the QW. We discuss possible mechanisms that give rise to spin-splitting of the electronic subband states for different symmetries.

Original language	English
Pages (from-to)	65-70
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	690
State	Published - 2002
Externally published	Yes

Cite this

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title = "Circular photogalvanic effect in SiGe semiconductor quantum wells",

abstract = "The photogalvanic effects, which require a system lacking inversion symmetry, become possible in SiGe based quantum well (QW) structures due to their built-in asymmetry. We report on observations of the circular and linear photogalvanic effects induced by infrared radiation in (001)- and (113)-oriented p-Si/Si1-xGex QW structures and analyse these observations in view of the possible symmetry of these structures. The circular photogalvanic effect arises due to optical spin orientation of free carriers in QWs with band splitting in k-space which results in a directed motion of free carriers in the plane of the QW. We discuss possible mechanisms that give rise to spin-splitting of the electronic subband states for different symmetries.",

author = "Ganichev, {Sergey D.} and Kalz, {Franz Peter} and Ulrich R{\"o}ssler and Wilhelm Prettl and Ivchenko, {Eugenius L.} and Bel'kov, {Vasily V.} and Robert Neumann and Karl Brunner and Gerhard Abstreiter",

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journal = "Materials Research Society Symposium - Proceedings",

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T1 - Circular photogalvanic effect in SiGe semiconductor quantum wells

AU - Ganichev, Sergey D.

AU - Kalz, Franz Peter

AU - Rössler, Ulrich

AU - Prettl, Wilhelm

AU - Ivchenko, Eugenius L.

AU - Bel'kov, Vasily V.

AU - Neumann, Robert

AU - Brunner, Karl

AU - Abstreiter, Gerhard

PY - 2002

Y1 - 2002

N2 - The photogalvanic effects, which require a system lacking inversion symmetry, become possible in SiGe based quantum well (QW) structures due to their built-in asymmetry. We report on observations of the circular and linear photogalvanic effects induced by infrared radiation in (001)- and (113)-oriented p-Si/Si1-xGex QW structures and analyse these observations in view of the possible symmetry of these structures. The circular photogalvanic effect arises due to optical spin orientation of free carriers in QWs with band splitting in k-space which results in a directed motion of free carriers in the plane of the QW. We discuss possible mechanisms that give rise to spin-splitting of the electronic subband states for different symmetries.

AB - The photogalvanic effects, which require a system lacking inversion symmetry, become possible in SiGe based quantum well (QW) structures due to their built-in asymmetry. We report on observations of the circular and linear photogalvanic effects induced by infrared radiation in (001)- and (113)-oriented p-Si/Si1-xGex QW structures and analyse these observations in view of the possible symmetry of these structures. The circular photogalvanic effect arises due to optical spin orientation of free carriers in QWs with band splitting in k-space which results in a directed motion of free carriers in the plane of the QW. We discuss possible mechanisms that give rise to spin-splitting of the electronic subband states for different symmetries.

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M3 - Article

AN - SCOPUS:0036353689

SN - 0272-9172

VL - 690

SP - 65

EP - 70

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Circular photogalvanic effect in SiGe semiconductor quantum wells

Abstract

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