Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

V. V. Bel'kov; S. D. Ganichev; Petra Schneider; C. Back; M. Oestreich; J. Rudolph; D. Hägele; L. E. Golub; W. Wegscheider; W. Prettl

doi:10.1016/j.ssc.2003.08.022

Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

V. V. Bel'kov
, S. D. Ganichev
, Petra Schneider
, C. Back
, M. Oestreich
, J. Rudolph
, D. Hägele
, L. E. Golub
, W. Wegscheider
, W. Prettl

University of Regensburg
The Russian Academy of Sciences
Leibniz Universität Hannover
Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

Original language	English
Pages (from-to)	283-286
Number of pages	4
Journal	Solid State Communications
Volume	128
Issue number	8
DOIs	https://doi.org/10.1016/j.ssc.2003.08.022
State	Published - Nov 2003
Externally published	Yes

Keywords

A. Quantum wells
D. Spin-orbit effects

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10.1016/j.ssc.2003.08.022

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@article{99fa89c235cc4fd99ba0cc703086fe63,

title = "Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells",

abstract = "We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.",

keywords = "A. Quantum wells, D. Spin-orbit effects",

author = "Bel'kov, \{V. V.\} and Ganichev, \{S. D.\} and Petra Schneider and C. Back and M. Oestreich and J. Rudolph and D. H{\"a}gele and Golub, \{L. E.\} and W. Wegscheider and W. Prettl",

year = "2003",

month = nov,

doi = "10.1016/j.ssc.2003.08.022",

language = "English",

volume = "128",

pages = "283--286",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "8",

}

TY - JOUR

T1 - Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

AU - Bel'kov, V. V.

AU - Ganichev, S. D.

AU - Schneider, Petra

AU - Back, C.

AU - Oestreich, M.

AU - Rudolph, J.

AU - Hägele, D.

AU - Golub, L. E.

AU - Wegscheider, W.

AU - Prettl, W.

PY - 2003/11

Y1 - 2003/11

N2 - We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

AB - We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

KW - A. Quantum wells

KW - D. Spin-orbit effects

UR - https://www.scopus.com/pages/publications/0141964005

U2 - 10.1016/j.ssc.2003.08.022

DO - 10.1016/j.ssc.2003.08.022

M3 - Article

AN - SCOPUS:0141964005

SN - 0038-1098

VL - 128

SP - 283

EP - 286

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

Abstract

Keywords

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