Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

V. V. Bel'kov; S. D. Ganichev; Petra Schneider; C. Back; M. Oestreich; J. Rudolph; D. Hägele; L. E. Golub; W. Wegscheider; W. Prettl

doi:10.1016/j.ssc.2003.08.022

Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

V. V. Bel'kov, S. D. Ganichev, Petra Schneider, C. Back, M. Oestreich, J. Rudolph, D. Hägele, L. E. Golub, W. Wegscheider, W. Prettl

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

Original language	English
Pages (from-to)	283-286
Number of pages	4
Journal	Solid State Communications
Volume	128
Issue number	8
DOIs	https://doi.org/10.1016/j.ssc.2003.08.022
State	Published - Nov 2003
Externally published	Yes

Keywords

A. Quantum wells
D. Spin-orbit effects

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10.1016/j.ssc.2003.08.022

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title = "Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells",

abstract = "We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.",

keywords = "A. Quantum wells, D. Spin-orbit effects",

author = "Bel'kov, {V. V.} and Ganichev, {S. D.} and Petra Schneider and C. Back and M. Oestreich and J. Rudolph and D. H{\"a}gele and Golub, {L. E.} and W. Wegscheider and W. Prettl",

year = "2003",

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doi = "10.1016/j.ssc.2003.08.022",

language = "English",

volume = "128",

pages = "283--286",

journal = "Solid State Communications",

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T1 - Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

AU - Bel'kov, V. V.

AU - Ganichev, S. D.

AU - Schneider, Petra

AU - Back, C.

AU - Oestreich, M.

AU - Rudolph, J.

AU - Hägele, D.

AU - Golub, L. E.

AU - Wegscheider, W.

AU - Prettl, W.

PY - 2003/11

Y1 - 2003/11

N2 - We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

AB - We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

KW - A. Quantum wells

KW - D. Spin-orbit effects

UR - http://www.scopus.com/inward/record.url?scp=0141964005&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2003.08.022

DO - 10.1016/j.ssc.2003.08.022

M3 - Article

AN - SCOPUS:0141964005

SN - 0038-1098

VL - 128

SP - 283

EP - 286

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

Abstract

Keywords

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