TY - GEN
T1 - Circuits with innovative devices - Challenges and chances
AU - Schmitt-Landsiedel, D.
AU - Werner, C.
PY - 2008
Y1 - 2008
N2 - MOS devices go 3D and new field effect devices appear in the research labs. The talk will regard implications of modified device architectures on established circuit design, showing examples of circuits with Multi-Gate-FETs and tunneling field effect transistors. The potential of more substantial paradigm changes in circuit design for novel devices will also be discussed.
AB - MOS devices go 3D and new field effect devices appear in the research labs. The talk will regard implications of modified device architectures on established circuit design, showing examples of circuits with Multi-Gate-FETs and tunneling field effect transistors. The potential of more substantial paradigm changes in circuit design for novel devices will also be discussed.
UR - http://www.scopus.com/inward/record.url?scp=49049105937&partnerID=8YFLogxK
U2 - 10.1109/ULIS.2008.4527145
DO - 10.1109/ULIS.2008.4527145
M3 - Conference contribution
AN - SCOPUS:49049105937
SN - 9781424417308
T3 - ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon
SP - 81
EP - 84
BT - ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon
T2 - 9th International Conference on ULtimate Integration of Silicon, ULIS 2008
Y2 - 13 March 2008 through 14 March 2008
ER -