CHEMICAL TRENDS OF DEEP IMPURITY LEVELS IN COVALENT SEMICONDUCTORS.

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Abstract

Recent developments in the theory of deep substitutional impurities in semiconductors which focus on chemical trends in the trap level energies are reviewed. These simple but general models provide a conceptual framework for understanding the major chemical trends in deep trap energies, including their dependence on the energy bands and the impurities' atomic structure. Approximate rules for predicting the ordering of impurity levels are given, which should facilitate the identification and cataloguing of substitional deep traps in tetrahedral semiconductors.

Original languageEnglish
Pages (from-to)191-219
Number of pages29
JournalFestkoerperprobleme
Volume21
DOIs
StatePublished - 1981
EventUnknown conference - Muenster, Ger
Duration: 9 Mar 198114 Mar 1981

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