Chemical beam epitaxy of GaInAsP for long-wavelength lasers

A. Nutsch; H. Kratzer; B. Torabi; G. Tränkle; G. Abstreiter; G. Weimann

doi:10.1016/S0022-0248(97)00499-5

Chemical beam epitaxy of GaInAsP for long-wavelength lasers

A. Nutsch
, H. Kratzer
, B. Torabi
, G. Tränkle
, G. Abstreiter
, G. Weimann

TUM Emeriti of Excellence

Walter Schottky Institut
Fraunhofer Institute for Applied Solid State Physics IAF
Ferdinand-Braun-Institut für Hochfrequenztechnik

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The precise control of growth parameters in chemical beam epitaxy (CBE) is essential for high-quality photonic devices and monolithic integration in OEICs. We find a very narrow growth window suitable for high-quality GaInAsP. We observe a strong dependence of crystal quality from the V/III ratio at a growth temperature of 543°C. For GaInAsP with a band gap of 0.95 eV (λ = 1.3 μm) a miscibility gap occurs at this temperature. The material quality is demonstrated by very narrow photoluminescence linewidths of 3-5 meV at 4.2 K for (GaIn)(AsP) layers of varying compositions. Laser diodes grown under the optimised conditions without growth interruptions show very low threshold current densities of 62 A cm^-2 per QW for 10 QWs. Internal losses can be reduced by using tensile-strained barriers.

Original language	English
Pages (from-to)	505-510
Number of pages	6
Journal	Journal of Crystal Growth
Volume	183
Issue number	4
DOIs	https://doi.org/10.1016/S0022-0248(97)00499-5
State	Published - Feb 1998

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title = "Chemical beam epitaxy of GaInAsP for long-wavelength lasers",

abstract = "The precise control of growth parameters in chemical beam epitaxy (CBE) is essential for high-quality photonic devices and monolithic integration in OEICs. We find a very narrow growth window suitable for high-quality GaInAsP. We observe a strong dependence of crystal quality from the V/III ratio at a growth temperature of 543°C. For GaInAsP with a band gap of 0.95 eV (λ = 1.3 μm) a miscibility gap occurs at this temperature. The material quality is demonstrated by very narrow photoluminescence linewidths of 3-5 meV at 4.2 K for (GaIn)(AsP) layers of varying compositions. Laser diodes grown under the optimised conditions without growth interruptions show very low threshold current densities of 62 A cm-2 per QW for 10 QWs. Internal losses can be reduced by using tensile-strained barriers.",

author = "A. Nutsch and H. Kratzer and B. Torabi and G. Tr{\"a}nkle and G. Abstreiter and G. Weimann",

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T1 - Chemical beam epitaxy of GaInAsP for long-wavelength lasers

AU - Nutsch, A.

AU - Kratzer, H.

AU - Torabi, B.

AU - Tränkle, G.

AU - Abstreiter, G.

AU - Weimann, G.

PY - 1998/2

Y1 - 1998/2

N2 - The precise control of growth parameters in chemical beam epitaxy (CBE) is essential for high-quality photonic devices and monolithic integration in OEICs. We find a very narrow growth window suitable for high-quality GaInAsP. We observe a strong dependence of crystal quality from the V/III ratio at a growth temperature of 543°C. For GaInAsP with a band gap of 0.95 eV (λ = 1.3 μm) a miscibility gap occurs at this temperature. The material quality is demonstrated by very narrow photoluminescence linewidths of 3-5 meV at 4.2 K for (GaIn)(AsP) layers of varying compositions. Laser diodes grown under the optimised conditions without growth interruptions show very low threshold current densities of 62 A cm-2 per QW for 10 QWs. Internal losses can be reduced by using tensile-strained barriers.

AB - The precise control of growth parameters in chemical beam epitaxy (CBE) is essential for high-quality photonic devices and monolithic integration in OEICs. We find a very narrow growth window suitable for high-quality GaInAsP. We observe a strong dependence of crystal quality from the V/III ratio at a growth temperature of 543°C. For GaInAsP with a band gap of 0.95 eV (λ = 1.3 μm) a miscibility gap occurs at this temperature. The material quality is demonstrated by very narrow photoluminescence linewidths of 3-5 meV at 4.2 K for (GaIn)(AsP) layers of varying compositions. Laser diodes grown under the optimised conditions without growth interruptions show very low threshold current densities of 62 A cm-2 per QW for 10 QWs. Internal losses can be reduced by using tensile-strained barriers.

UR - https://www.scopus.com/pages/publications/0031997313

U2 - 10.1016/S0022-0248(97)00499-5

DO - 10.1016/S0022-0248(97)00499-5

M3 - Article

AN - SCOPUS:0031997313

SN - 0022-0248

VL - 183

SP - 505

EP - 510

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Chemical beam epitaxy of GaInAsP for long-wavelength lasers

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