Chemical beam epitaxy of GaInAsP for long-wavelength lasers

A. Nutsch; H. Kratzer; B. Torabi; G. Tränkle; G. Abstreiter; G. Weimann

doi:10.1016/S0022-0248(97)00499-5

Chemical beam epitaxy of GaInAsP for long-wavelength lasers

A. Nutsch, H. Kratzer, B. Torabi, G. Tränkle, G. Abstreiter, G. Weimann

TUM Emeriti of Excellence

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Abstract

The precise control of growth parameters in chemical beam epitaxy (CBE) is essential for high-quality photonic devices and monolithic integration in OEICs. We find a very narrow growth window suitable for high-quality GaInAsP. We observe a strong dependence of crystal quality from the V/III ratio at a growth temperature of 543°C. For GaInAsP with a band gap of 0.95 eV (λ = 1.3 μm) a miscibility gap occurs at this temperature. The material quality is demonstrated by very narrow photoluminescence linewidths of 3-5 meV at 4.2 K for (GaIn)(AsP) layers of varying compositions. Laser diodes grown under the optimised conditions without growth interruptions show very low threshold current densities of 62 A cm^-2 per QW for 10 QWs. Internal losses can be reduced by using tensile-strained barriers.

Original language	English
Pages (from-to)	505-510
Number of pages	6
Journal	Journal of Crystal Growth
Volume	183
Issue number	4
DOIs	https://doi.org/10.1016/S0022-0248(97)00499-5
State	Published - Feb 1998

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title = "Chemical beam epitaxy of GaInAsP for long-wavelength lasers",

abstract = "The precise control of growth parameters in chemical beam epitaxy (CBE) is essential for high-quality photonic devices and monolithic integration in OEICs. We find a very narrow growth window suitable for high-quality GaInAsP. We observe a strong dependence of crystal quality from the V/III ratio at a growth temperature of 543°C. For GaInAsP with a band gap of 0.95 eV (λ = 1.3 μm) a miscibility gap occurs at this temperature. The material quality is demonstrated by very narrow photoluminescence linewidths of 3-5 meV at 4.2 K for (GaIn)(AsP) layers of varying compositions. Laser diodes grown under the optimised conditions without growth interruptions show very low threshold current densities of 62 A cm-2 per QW for 10 QWs. Internal losses can be reduced by using tensile-strained barriers.",

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T1 - Chemical beam epitaxy of GaInAsP for long-wavelength lasers

AU - Nutsch, A.

AU - Kratzer, H.

AU - Torabi, B.

AU - Tränkle, G.

AU - Abstreiter, G.

AU - Weimann, G.

PY - 1998/2

Y1 - 1998/2

N2 - The precise control of growth parameters in chemical beam epitaxy (CBE) is essential for high-quality photonic devices and monolithic integration in OEICs. We find a very narrow growth window suitable for high-quality GaInAsP. We observe a strong dependence of crystal quality from the V/III ratio at a growth temperature of 543°C. For GaInAsP with a band gap of 0.95 eV (λ = 1.3 μm) a miscibility gap occurs at this temperature. The material quality is demonstrated by very narrow photoluminescence linewidths of 3-5 meV at 4.2 K for (GaIn)(AsP) layers of varying compositions. Laser diodes grown under the optimised conditions without growth interruptions show very low threshold current densities of 62 A cm-2 per QW for 10 QWs. Internal losses can be reduced by using tensile-strained barriers.

AB - The precise control of growth parameters in chemical beam epitaxy (CBE) is essential for high-quality photonic devices and monolithic integration in OEICs. We find a very narrow growth window suitable for high-quality GaInAsP. We observe a strong dependence of crystal quality from the V/III ratio at a growth temperature of 543°C. For GaInAsP with a band gap of 0.95 eV (λ = 1.3 μm) a miscibility gap occurs at this temperature. The material quality is demonstrated by very narrow photoluminescence linewidths of 3-5 meV at 4.2 K for (GaIn)(AsP) layers of varying compositions. Laser diodes grown under the optimised conditions without growth interruptions show very low threshold current densities of 62 A cm-2 per QW for 10 QWs. Internal losses can be reduced by using tensile-strained barriers.

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Chemical beam epitaxy of GaInAsP for long-wavelength lasers

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