Charge-induced structural relaxation in amorphous semiconductors

Gerhard Muller

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The concept of charge-induced bond breaking, introduced earlier for the treatment of defects in a-Si: H by Stutzmann is extended to lone-pair materials. It is shown that, in both classes of materials, band-tail localized charge carriers can give rise to local coordination changes which are consistent with the generalized 8-N rule given by Street. It is shown that these charge-driven coordination changes are able to account for the common features of both classes such as the insensitivity to doping, the occurrence of photo-induced effects and an increasing defect density with decreasing mobility gap. Differences arise on a more quantitative scale in that the relaxation reactions in lone-pair materials are more exothermic than those in tetrahedrally coordinated materials.

Original languageEnglish
Pages (from-to)465-475
Number of pages11
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume63
Issue number2
DOIs
StatePublished - Feb 1991
Externally publishedYes

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