Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

K. Borer, S. Janos, V. G. Palmieri, B. Dezillie, Z. Li, P. Collins, T. O. Niinikoski, C. Lourenço, P. Sonderegger, E. Borchi, M. Bruzzi, S. Pirollo, V. Granata, S. Pagano, S. Chapuy, Z. Dimcovski, E. Grigoriev, W. Bell, S. R.H. Devine, V. O'SheaK. Smith, P. Berglund, W. De Boer, F. Hauler, S. Heising, L. Jungermann, L. Casagrande, V. Cindro, M. Mikuž, M. Zavartanik, C. Da Viá, A. Esposito, I. Konorov, S. Paul, L. Schmitt, S. Buontempo, N. D'Ambrosio, S. Pagano, G. Ruggiero, V. Eremin, E. Verbitskaya

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47 Scopus citations

Abstract

The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2×1015 n/cm2 yields a MIP signal of at least 15000 e- both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The `Lazarus effect' was thus shown to extend to fluences at least ten times higher than was previously studied.

Original languageEnglish
Pages (from-to)5-16
Number of pages12
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume440
Issue number1
DOIs
StatePublished - 21 Jan 2000

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