Charge collection efficiency of an irradiated cryogenic double-p silicon detector

K. Borer; S. Janos; Z. Li; B. Dezillie; C. Da Viá; V. Granata; L. Casagrande; R. W.I. De Boer; C. Lourenço; T. O. Niinikoski; V. G. Palmieri; S. Chapuy; Z. Dimcovski; E. Grigoriev; W. Bell; S. R.H. Devine; G. Ruggiero; V. O'Shea; K. Smith; P. Berglund; W. De Boer; F. Hauler; S. Heising; L. Jungermann; M. Abreu; P. Rato; P. Sousa; V. Cindro; M. Mikuz; M. Zavrtanik; A. Esposito; S. Paul; S. Buontempo; N. D'Ambrosio; S. Pagano; V. Eremin; E. Verbitskaya

doi:10.1016/S0168-9002(01)00198-X

Charge collection efficiency of an irradiated cryogenic double-p silicon detector

K. Borer
, S. Janos
, Z. Li
, B. Dezillie
, C. Da Viá
, V. Granata
, L. Casagrande
, R. W.I. De Boer
, C. Lourenço
, T. O. Niinikoski
, V. G. Palmieri
, S. Chapuy
, Z. Dimcovski
, E. Grigoriev
, W. Bell
, S. R.H. Devine
, G. Ruggiero
, V. O'Shea
, K. Smith
, P. Berglund

W. De Boer, F. Hauler, S. Heising, L. Jungermann, M. Abreu, P. Rato, P. Sousa, V. Cindro, M. Mikuz, M. Zavrtanik, A. Esposito, S. Paul, S. Buontempo, N. D'Ambrosio, S. Pagano, V. Eremin, E. Verbitskaya

Chair of Physics I

University of Bern
Brookhaven National Laboratory
Brunel University London
European Organization for Nuclear Research
University of Geneva
University of Glasgow
Helsinki University of Technology
University of Karlsruhe
LIP - Lisboa
Jožef Stefan Institute
Technical University of Munich
Università di Napoli Federico II
The Russian Academy of Sciences

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We present results on the measurement of the charge collection efficiency of a p⁺/n/p⁺ silicon detector irradiated to 1 × 10¹⁵ n/cm², operated in the temperature range between 80 and 200 K. For comparison, measurements obtained with a standard silicon diode (p⁺/n/n⁺), irradiated to the same fluence, are also presented. Both detectors show a dramatic increase of the CCE when operated at temperatures around 130 K. The double-p detector shows a higher CCE regardless of the applied bias and temperature, besides being symmetric with respect to the polarity of the bias voltage. At 130 K and 500 V applied bias the double-p detector shows a CCE of 80%, an unprecedented result for a silicon detector irradiated to such a high dose.

Original language	English
Pages (from-to)	474-483
Number of pages	10
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	462
Issue number	3
DOIs	https://doi.org/10.1016/S0168-9002(01)00198-X
State	Published - 21 Apr 2001

Keywords

Cryogenic silicon detectors
Lazarus effect

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10.1016/S0168-9002(01)00198-X

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Borer, K., Janos, S., Li, Z., Dezillie, B., Da Viá, C., Granata, V., Casagrande, L., De Boer, R. W. I., Lourenço, C., Niinikoski, T. O., Palmieri, V. G., Chapuy, S., Dimcovski, Z., Grigoriev, E., Bell, W., Devine, S. R. H., Ruggiero, G., O'Shea, V., Smith, K., ... Verbitskaya, E. (2001). Charge collection efficiency of an irradiated cryogenic double-p silicon detector. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 462(3), 474-483. https://doi.org/10.1016/S0168-9002(01)00198-X

@article{1a64b612c2904372a4ec5b287983ebee,

title = "Charge collection efficiency of an irradiated cryogenic double-p silicon detector",

abstract = "We present results on the measurement of the charge collection efficiency of a p+/n/p+ silicon detector irradiated to 1 × 1015 n/cm2, operated in the temperature range between 80 and 200 K. For comparison, measurements obtained with a standard silicon diode (p+/n/n+), irradiated to the same fluence, are also presented. Both detectors show a dramatic increase of the CCE when operated at temperatures around 130 K. The double-p detector shows a higher CCE regardless of the applied bias and temperature, besides being symmetric with respect to the polarity of the bias voltage. At 130 K and 500 V applied bias the double-p detector shows a CCE of 80\%, an unprecedented result for a silicon detector irradiated to such a high dose.",

keywords = "Cryogenic silicon detectors, Lazarus effect",

author = "K. Borer and S. Janos and Z. Li and B. Dezillie and \{Da Vi{\'a}\}, C. and V. Granata and L. Casagrande and \{De Boer\}, \{R. W.I.\} and C. Louren{\c c}o and Niinikoski, \{T. O.\} and Palmieri, \{V. G.\} and S. Chapuy and Z. Dimcovski and E. Grigoriev and W. Bell and Devine, \{S. R.H.\} and G. Ruggiero and V. O'Shea and K. Smith and P. Berglund and \{De Boer\}, W. and F. Hauler and S. Heising and L. Jungermann and M. Abreu and P. Rato and P. Sousa and V. Cindro and M. Mikuz and M. Zavrtanik and A. Esposito and S. Paul and S. Buontempo and N. D'Ambrosio and S. Pagano and V. Eremin and E. Verbitskaya",

year = "2001",

month = apr,

day = "21",

doi = "10.1016/S0168-9002(01)00198-X",

language = "English",

volume = "462",

pages = "474--483",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

number = "3",

}

Borer, K, Janos, S, Li, Z, Dezillie, B, Da Viá, C, Granata, V, Casagrande, L, De Boer, RWI, Lourenço, C, Niinikoski, TO, Palmieri, VG, Chapuy, S, Dimcovski, Z, Grigoriev, E, Bell, W, Devine, SRH, Ruggiero, G, O'Shea, V, Smith, K, Berglund, P, De Boer, W, Hauler, F, Heising, S, Jungermann, L, Abreu, M, Rato, P, Sousa, P, Cindro, V, Mikuz, M, Zavrtanik, M, Esposito, A, Paul, S, Buontempo, S, D'Ambrosio, N, Pagano, S, Eremin, V & Verbitskaya, E 2001, 'Charge collection efficiency of an irradiated cryogenic double-p silicon detector', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 462, no. 3, pp. 474-483. https://doi.org/10.1016/S0168-9002(01)00198-X

TY - JOUR

T1 - Charge collection efficiency of an irradiated cryogenic double-p silicon detector

AU - Borer, K.

AU - Janos, S.

AU - Li, Z.

AU - Dezillie, B.

AU - Da Viá, C.

AU - Granata, V.

AU - Casagrande, L.

AU - De Boer, R. W.I.

AU - Lourenço, C.

AU - Niinikoski, T. O.

AU - Palmieri, V. G.

AU - Chapuy, S.

AU - Dimcovski, Z.

AU - Grigoriev, E.

AU - Bell, W.

AU - Devine, S. R.H.

AU - Ruggiero, G.

AU - O'Shea, V.

AU - Smith, K.

AU - Berglund, P.

AU - De Boer, W.

AU - Hauler, F.

AU - Heising, S.

AU - Jungermann, L.

AU - Abreu, M.

AU - Rato, P.

AU - Sousa, P.

AU - Cindro, V.

AU - Mikuz, M.

AU - Zavrtanik, M.

AU - Esposito, A.

AU - Paul, S.

AU - Buontempo, S.

AU - D'Ambrosio, N.

AU - Pagano, S.

AU - Eremin, V.

AU - Verbitskaya, E.

PY - 2001/4/21

Y1 - 2001/4/21

N2 - We present results on the measurement of the charge collection efficiency of a p+/n/p+ silicon detector irradiated to 1 × 1015 n/cm2, operated in the temperature range between 80 and 200 K. For comparison, measurements obtained with a standard silicon diode (p+/n/n+), irradiated to the same fluence, are also presented. Both detectors show a dramatic increase of the CCE when operated at temperatures around 130 K. The double-p detector shows a higher CCE regardless of the applied bias and temperature, besides being symmetric with respect to the polarity of the bias voltage. At 130 K and 500 V applied bias the double-p detector shows a CCE of 80%, an unprecedented result for a silicon detector irradiated to such a high dose.

AB - We present results on the measurement of the charge collection efficiency of a p+/n/p+ silicon detector irradiated to 1 × 1015 n/cm2, operated in the temperature range between 80 and 200 K. For comparison, measurements obtained with a standard silicon diode (p+/n/n+), irradiated to the same fluence, are also presented. Both detectors show a dramatic increase of the CCE when operated at temperatures around 130 K. The double-p detector shows a higher CCE regardless of the applied bias and temperature, besides being symmetric with respect to the polarity of the bias voltage. At 130 K and 500 V applied bias the double-p detector shows a CCE of 80%, an unprecedented result for a silicon detector irradiated to such a high dose.

KW - Cryogenic silicon detectors

KW - Lazarus effect

UR - https://www.scopus.com/pages/publications/18144446880

U2 - 10.1016/S0168-9002(01)00198-X

DO - 10.1016/S0168-9002(01)00198-X

M3 - Article

AN - SCOPUS:18144446880

SN - 0168-9002

VL - 462

SP - 474

EP - 483

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 3

ER -

Charge collection efficiency of an irradiated cryogenic double-p silicon detector

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Keywords

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