Charge collection efficiency of an irradiated cryogenic double-p silicon detector

K. Borer, S. Janos, Z. Li, B. Dezillie, C. Da Viá, V. Granata, L. Casagrande, R. W.I. De Boer, C. Lourenço, T. O. Niinikoski, V. G. Palmieri, S. Chapuy, Z. Dimcovski, E. Grigoriev, W. Bell, S. R.H. Devine, G. Ruggiero, V. O'Shea, K. Smith, P. BerglundW. De Boer, F. Hauler, S. Heising, L. Jungermann, M. Abreu, P. Rato, P. Sousa, V. Cindro, M. Mikuz, M. Zavrtanik, A. Esposito, S. Paul, S. Buontempo, N. D'Ambrosio, S. Pagano, V. Eremin, E. Verbitskaya

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


We present results on the measurement of the charge collection efficiency of a p+/n/p+ silicon detector irradiated to 1 × 1015 n/cm2, operated in the temperature range between 80 and 200 K. For comparison, measurements obtained with a standard silicon diode (p+/n/n+), irradiated to the same fluence, are also presented. Both detectors show a dramatic increase of the CCE when operated at temperatures around 130 K. The double-p detector shows a higher CCE regardless of the applied bias and temperature, besides being symmetric with respect to the polarity of the bias voltage. At 130 K and 500 V applied bias the double-p detector shows a CCE of 80%, an unprecedented result for a silicon detector irradiated to such a high dose.

Original languageEnglish
Pages (from-to)474-483
Number of pages10
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number3
StatePublished - 21 Apr 2001
Externally publishedYes


  • Cryogenic silicon detectors
  • Lazarus effect


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