Characterization of planar resonators by means of integrated Schottky diodes

A. Stiller, M. Singer, K. M. Strohm, E. M. Biebl

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


In this paper a method is presented to examine the suitability of planar structures to work as a resonator for IMPATT diodes in a frequency range above 70 GHz. The IMPATT diode is replaced by a Schottky diode previously characterized by impedance. It is suggested to test the suitability of the resonator for an IMPATT diode by employing the radiation characteristics of the structure. This set-up allows the determination of the detector's sensitivity depending on the frequency. The sensitivity corresponds to the matching of the resonator and the SCHOTTKY diode. Thus, for maximum sensitivity the equation ZSCHOTTKY ≈ - ZIMPATT+ allows to assess the suitability of the planar structure to function as a resonator for an IMPATT diode.

Original languageEnglish
Pages (from-to)1151-1154
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
StatePublished - 1995
EventProceedings of the 1995 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Orlando, FL, USA
Duration: 16 May 199520 May 1995


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