Characterization of planar resonators by means of integrated Schottky diodes

A. Stiller; M. Singer; K. M. Strohm; E. M. Biebl

Characterization of planar resonators by means of integrated Schottky diodes

A. Stiller, M. Singer, K. M. Strohm, E. M. Biebl

Associate Professorship of Very High Frequency Technology

Technical University of Munich

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

In this paper a method is presented to examine the suitability of planar structures to work as a resonator for IMPATT diodes in a frequency range above 70 GHz. The IMPATT diode is replaced by a Schottky diode previously characterized by impedance. It is suggested to test the suitability of the resonator for an IMPATT diode by employing the radiation characteristics of the structure. This set-up allows the determination of the detector's sensitivity depending on the frequency. The sensitivity corresponds to the matching of the resonator and the SCHOTTKY diode. Thus, for maximum sensitivity the equation Z_SCHOTTKY ≈ - Z_IMPATT⁺ allows to assess the suitability of the planar structure to function as a resonator for an IMPATT diode.

Original language	English
Pages (from-to)	1151-1154
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	3
State	Published - 1995
Event	Proceedings of the 1995 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Orlando, FL, USA Duration: 16 May 1995 → 20 May 1995

Cite this

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title = "Characterization of planar resonators by means of integrated Schottky diodes",

abstract = "In this paper a method is presented to examine the suitability of planar structures to work as a resonator for IMPATT diodes in a frequency range above 70 GHz. The IMPATT diode is replaced by a Schottky diode previously characterized by impedance. It is suggested to test the suitability of the resonator for an IMPATT diode by employing the radiation characteristics of the structure. This set-up allows the determination of the detector's sensitivity depending on the frequency. The sensitivity corresponds to the matching of the resonator and the SCHOTTKY diode. Thus, for maximum sensitivity the equation ZSCHOTTKY ≈ - ZIMPATT+ allows to assess the suitability of the planar structure to function as a resonator for an IMPATT diode.",

author = "A. Stiller and M. Singer and Strohm, {K. M.} and Biebl, {E. M.}",

year = "1995",

language = "English",

volume = "3",

pages = "1151--1154",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1995 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) ; Conference date: 16-05-1995 Through 20-05-1995",

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TY - JOUR

T1 - Characterization of planar resonators by means of integrated Schottky diodes

AU - Stiller, A.

AU - Singer, M.

AU - Strohm, K. M.

AU - Biebl, E. M.

PY - 1995

Y1 - 1995

N2 - In this paper a method is presented to examine the suitability of planar structures to work as a resonator for IMPATT diodes in a frequency range above 70 GHz. The IMPATT diode is replaced by a Schottky diode previously characterized by impedance. It is suggested to test the suitability of the resonator for an IMPATT diode by employing the radiation characteristics of the structure. This set-up allows the determination of the detector's sensitivity depending on the frequency. The sensitivity corresponds to the matching of the resonator and the SCHOTTKY diode. Thus, for maximum sensitivity the equation ZSCHOTTKY ≈ - ZIMPATT+ allows to assess the suitability of the planar structure to function as a resonator for an IMPATT diode.

AB - In this paper a method is presented to examine the suitability of planar structures to work as a resonator for IMPATT diodes in a frequency range above 70 GHz. The IMPATT diode is replaced by a Schottky diode previously characterized by impedance. It is suggested to test the suitability of the resonator for an IMPATT diode by employing the radiation characteristics of the structure. This set-up allows the determination of the detector's sensitivity depending on the frequency. The sensitivity corresponds to the matching of the resonator and the SCHOTTKY diode. Thus, for maximum sensitivity the equation ZSCHOTTKY ≈ - ZIMPATT+ allows to assess the suitability of the planar structure to function as a resonator for an IMPATT diode.

UR - http://www.scopus.com/inward/record.url?scp=0029211012&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029211012

SN - 0149-645X

VL - 3

SP - 1151

EP - 1154

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1995 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)

Y2 - 16 May 1995 through 20 May 1995

ER -

Characterization of planar resonators by means of integrated Schottky diodes

Abstract

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