Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Gianluca Aglieri Rinella; Giacomo Alocco; Matias Antonelli; Roberto Baccomi; Stefania Maria Beole; Mihail Bogdan Blidaru; Bent Benedikt Buttwill; Eric Buschmann; Paolo Camerini; Francesca Carnesecchi; Marielle Chartier; Yongjun Choi; Manuel Colocci; Giacomo Contin; Dominik Dannheim; Daniele De Gruttola; Manuel Del Rio Viera; Andrea Dubla; Antonello di Mauro; Maurice Calvin Donner; Gregor Hieronymus Eberwein; Jan Egger; Laura Fabbietti; Finn Feindt; Kunal Gautam; Roman Gernhaeuser; James Julian Glover; Laura Gonella; Karl Gran Grodaas; Ingrid Maria Gregor; Hartmut Hillemanns; Lennart Huth; Armin Ilg; Artem Isakov; Daniel Matthew Jones; Antoine Junique; Jetnipit Kaewjai; Markus Keil; Jiyoung Kim; Alex Kluge; Chinorat Kobdaj; Artem Kotliarov; Kritsada Kittimanapun; Filip Křížek; Gabriela Kucharska; Svetlana Kushpil; Paola La Rocca; Natthawut Laojamnongwong; Lukas Lautner; Roy Crawford Lemmon; Corentin Lemoine; Long Li; Francesco Librizzi; Jian Liu; Anna Macchiolo; Magnus Mager; Davide Marras; Paolo Martinengo; Silvia Masciocchi; Serena Mattiazzo; Marius Wilm Menzel; Alice Mulliri; Alexander Musta; Mia Rose Mylne; Francesco Piro; Alexandre Rachevski; Marika Rasà; Karoliina Rebane; Felix Reidt; Riccardo Ricci; Sara Ruiz Daza; Gaspare Saccà; Isabella Sanna; Valerio Sarritzu; Judith Schlaadt; David Schledewitz; Gilda Scioli; Serhiy Senyukov; Adriana Simancas; Walter Snoeys; Simon Spannagel; Miljenko Šuljić; Alessandro Sturniolo; Nicolas Tiltmann; Antonio Trifirò; Gianluca Usai; Tomas Vanat; Jacob Bastiaan Van Beelen; Laszlo Varga; Michele Verdoglia; Gianpiero Vignola; Anna Villani; Haakan Wennloef; Jonathan Witte; Rebekka Bettina Wittwer

doi:10.1016/j.nima.2024.169896

Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Gianluca Aglieri Rinella, Giacomo Alocco, Matias Antonelli, Roberto Baccomi, Stefania Maria Beole, Mihail Bogdan Blidaru, Bent Benedikt Buttwill, Eric Buschmann, Paolo Camerini, Francesca Carnesecchi, Marielle Chartier, Yongjun Choi, Manuel Colocci, Giacomo Contin, Dominik Dannheim, Daniele De Gruttola, Manuel Del Rio Viera, Andrea Dubla, Antonello di Mauro, Maurice Calvin DonnerGregor Hieronymus Eberwein, Jan Egger, Laura Fabbietti, Finn Feindt, Kunal Gautam, Roman Gernhaeuser, James Julian Glover, Laura Gonella, Karl Gran Grodaas, Ingrid Maria Gregor, Hartmut Hillemanns, Lennart Huth, Armin Ilg, Artem Isakov, Daniel Matthew Jones, Antoine Junique, Jetnipit Kaewjai, Markus Keil, Jiyoung Kim, Alex Kluge, Chinorat Kobdaj, Artem Kotliarov, Kritsada Kittimanapun, Filip Křížek, Gabriela Kucharska, Svetlana Kushpil, Paola La Rocca, Natthawut Laojamnongwong, Lukas Lautner, Roy Crawford Lemmon, Corentin Lemoine, Long Li, Francesco Librizzi, Jian Liu, Anna Macchiolo, Magnus Mager, Davide Marras, Paolo Martinengo, Silvia Masciocchi, Serena Mattiazzo, Marius Wilm Menzel, Alice Mulliri, Alexander Musta, Mia Rose Mylne, Francesco Piro, Alexandre Rachevski, Marika Rasà, Karoliina Rebane, Felix Reidt, Riccardo Ricci, Sara Ruiz Daza, Gaspare Saccà, Isabella Sanna, Valerio Sarritzu, Judith Schlaadt, David Schledewitz, Gilda Scioli, Serhiy Senyukov, Adriana Simancas, Walter Snoeys, Simon Spannagel, Miljenko Šuljić, Alessandro Sturniolo, Nicolas Tiltmann, Antonio Trifirò, Gianluca Usai, Tomas Vanat, Jacob Bastiaan Van Beelen, Laszlo Varga, Michele Verdoglia, Gianpiero Vignola, Anna Villani, Haakan Wennloef, Jonathan Witte, Rebekka Bettina Wittwer

Chair of Experimentalphysik - Dense and Strange Hadronic Matter

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterize and qualify this process and to optimize the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10–25 μm). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and 10¹⁶ 1 MeV n_eq cm⁻². Here the results from prototypes that feature direct analogue output of a 4 × 4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using ⁵⁵Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimizations.

Original language	English
Article number	169896
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	1069
DOIs	https://doi.org/10.1016/j.nima.2024.169896
State	Published - Dec 2024

Keywords

CMOS
MAPS
Particle detection
Silicon
Solid state detectors
Test beam

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10.1016/j.nima.2024.169896

Cite this

Aglieri Rinella, G., Alocco, G., Antonelli, M., Baccomi, R., Beole, S. M., Blidaru, M. B., Buttwill, B. B., Buschmann, E., Camerini, P., Carnesecchi, F., Chartier, M., Choi, Y., Colocci, M., Contin, G., Dannheim, D., De Gruttola, D., Del Rio Viera, M., Dubla, A., di Mauro, A., ... Wittwer, R. B. (2024). Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1069, Article 169896. https://doi.org/10.1016/j.nima.2024.169896

@article{c5d36fee696d4079ae16daf71d6b6c43,

title = "Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process",

abstract = "Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterize and qualify this process and to optimize the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10–25 μm). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and 1016 1 MeV neq cm−2. Here the results from prototypes that feature direct analogue output of a 4 × 4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using 55Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimizations.",

keywords = "CMOS, MAPS, Particle detection, Silicon, Solid state detectors, Test beam",

author = "{Aglieri Rinella}, Gianluca and Giacomo Alocco and Matias Antonelli and Roberto Baccomi and Beole, {Stefania Maria} and Blidaru, {Mihail Bogdan} and Buttwill, {Bent Benedikt} and Eric Buschmann and Paolo Camerini and Francesca Carnesecchi and Marielle Chartier and Yongjun Choi and Manuel Colocci and Giacomo Contin and Dominik Dannheim and {De Gruttola}, Daniele and {Del Rio Viera}, Manuel and Andrea Dubla and {di Mauro}, Antonello and Donner, {Maurice Calvin} and Eberwein, {Gregor Hieronymus} and Jan Egger and Laura Fabbietti and Finn Feindt and Kunal Gautam and Roman Gernhaeuser and Glover, {James Julian} and Laura Gonella and {Gran Grodaas}, Karl and Gregor, {Ingrid Maria} and Hartmut Hillemanns and Lennart Huth and Armin Ilg and Artem Isakov and Jones, {Daniel Matthew} and Antoine Junique and Jetnipit Kaewjai and Markus Keil and Jiyoung Kim and Alex Kluge and Chinorat Kobdaj and Artem Kotliarov and Kritsada Kittimanapun and Filip K{\v r}{\'i}{\v z}ek and Gabriela Kucharska and Svetlana Kushpil and {La Rocca}, Paola and Natthawut Laojamnongwong and Lukas Lautner and Lemmon, {Roy Crawford} and Corentin Lemoine and Long Li and Francesco Librizzi and Jian Liu and Anna Macchiolo and Magnus Mager and Davide Marras and Paolo Martinengo and Silvia Masciocchi and Serena Mattiazzo and Menzel, {Marius Wilm} and Alice Mulliri and Alexander Musta and Mylne, {Mia Rose} and Francesco Piro and Alexandre Rachevski and Marika Ras{\`a} and Karoliina Rebane and Felix Reidt and Riccardo Ricci and {Ruiz Daza}, Sara and Gaspare Sacc{\`a} and Isabella Sanna and Valerio Sarritzu and Judith Schlaadt and David Schledewitz and Gilda Scioli and Serhiy Senyukov and Adriana Simancas and Walter Snoeys and Simon Spannagel and Miljenko {\v S}ulji{\'c} and Alessandro Sturniolo and Nicolas Tiltmann and Antonio Trifir{\`o} and Gianluca Usai and Tomas Vanat and {Van Beelen}, {Jacob Bastiaan} and Laszlo Varga and Michele Verdoglia and Gianpiero Vignola and Anna Villani and Haakan Wennloef and Jonathan Witte and Wittwer, {Rebekka Bettina}",

note = "Publisher Copyright: {\textcopyright} 2024",

year = "2024",

month = dec,

doi = "10.1016/j.nima.2024.169896",

language = "English",

volume = "1069",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

}

Aglieri Rinella, G, Alocco, G, Antonelli, M, Baccomi, R, Beole, SM, Blidaru, MB, Buttwill, BB, Buschmann, E, Camerini, P, Carnesecchi, F, Chartier, M, Choi, Y, Colocci, M, Contin, G, Dannheim, D, De Gruttola, D, Del Rio Viera, M, Dubla, A, di Mauro, A, Donner, MC, Eberwein, GH, Egger, J, Fabbietti, L, Feindt, F, Gautam, K, Gernhaeuser, R, Glover, JJ, Gonella, L, Gran Grodaas, K, Gregor, IM, Hillemanns, H, Huth, L, Ilg, A, Isakov, A, Jones, DM, Junique, A, Kaewjai, J, Keil, M, Kim, J, Kluge, A, Kobdaj, C, Kotliarov, A, Kittimanapun, K, Křížek, F, Kucharska, G, Kushpil, S, La Rocca, P, Laojamnongwong, N, Lautner, L, Lemmon, RC, Lemoine, C, Li, L, Librizzi, F, Liu, J, Macchiolo, A, Mager, M, Marras, D, Martinengo, P, Masciocchi, S, Mattiazzo, S, Menzel, MW, Mulliri, A, Musta, A, Mylne, MR, Piro, F, Rachevski, A, Rasà, M, Rebane, K, Reidt, F, Ricci, R, Ruiz Daza, S, Saccà, G, Sanna, I, Sarritzu, V, Schlaadt, J, Schledewitz, D, Scioli, G, Senyukov, S, Simancas, A, Snoeys, W, Spannagel, S, Šuljić, M, Sturniolo, A, Tiltmann, N, Trifirò, A, Usai, G, Vanat, T, Van Beelen, JB, Varga, L, Verdoglia, M, Vignola, G, Villani, A, Wennloef, H, Witte, J & Wittwer, RB 2024, 'Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 1069, 169896. https://doi.org/10.1016/j.nima.2024.169896

Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process. / Aglieri Rinella, Gianluca; Alocco, Giacomo; Antonelli, Matias et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 1069, 169896, 12.2024.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

AU - Aglieri Rinella, Gianluca

AU - Alocco, Giacomo

AU - Antonelli, Matias

AU - Baccomi, Roberto

AU - Beole, Stefania Maria

AU - Blidaru, Mihail Bogdan

AU - Buttwill, Bent Benedikt

AU - Buschmann, Eric

AU - Camerini, Paolo

AU - Carnesecchi, Francesca

AU - Chartier, Marielle

AU - Choi, Yongjun

AU - Colocci, Manuel

AU - Contin, Giacomo

AU - Dannheim, Dominik

AU - De Gruttola, Daniele

AU - Del Rio Viera, Manuel

AU - Dubla, Andrea

AU - di Mauro, Antonello

AU - Donner, Maurice Calvin

AU - Eberwein, Gregor Hieronymus

AU - Egger, Jan

AU - Fabbietti, Laura

AU - Feindt, Finn

AU - Gautam, Kunal

AU - Gernhaeuser, Roman

AU - Glover, James Julian

AU - Gonella, Laura

AU - Gran Grodaas, Karl

AU - Gregor, Ingrid Maria

AU - Hillemanns, Hartmut

AU - Huth, Lennart

AU - Ilg, Armin

AU - Isakov, Artem

AU - Jones, Daniel Matthew

AU - Junique, Antoine

AU - Kaewjai, Jetnipit

AU - Keil, Markus

AU - Kim, Jiyoung

AU - Kluge, Alex

AU - Kobdaj, Chinorat

AU - Kotliarov, Artem

AU - Kittimanapun, Kritsada

AU - Křížek, Filip

AU - Kucharska, Gabriela

AU - Kushpil, Svetlana

AU - La Rocca, Paola

AU - Laojamnongwong, Natthawut

AU - Lautner, Lukas

AU - Lemmon, Roy Crawford

AU - Lemoine, Corentin

AU - Li, Long

AU - Librizzi, Francesco

AU - Liu, Jian

AU - Macchiolo, Anna

AU - Mager, Magnus

AU - Marras, Davide

AU - Martinengo, Paolo

AU - Masciocchi, Silvia

AU - Mattiazzo, Serena

AU - Menzel, Marius Wilm

AU - Mulliri, Alice

AU - Musta, Alexander

AU - Mylne, Mia Rose

AU - Piro, Francesco

AU - Rachevski, Alexandre

AU - Rasà, Marika

AU - Rebane, Karoliina

AU - Reidt, Felix

AU - Ricci, Riccardo

AU - Ruiz Daza, Sara

AU - Saccà, Gaspare

AU - Sanna, Isabella

AU - Sarritzu, Valerio

AU - Schlaadt, Judith

AU - Schledewitz, David

AU - Scioli, Gilda

AU - Senyukov, Serhiy

AU - Simancas, Adriana

AU - Snoeys, Walter

AU - Spannagel, Simon

AU - Šuljić, Miljenko

AU - Sturniolo, Alessandro

AU - Tiltmann, Nicolas

AU - Trifirò, Antonio

AU - Usai, Gianluca

AU - Vanat, Tomas

AU - Van Beelen, Jacob Bastiaan

AU - Varga, Laszlo

AU - Verdoglia, Michele

AU - Vignola, Gianpiero

AU - Villani, Anna

AU - Wennloef, Haakan

AU - Witte, Jonathan

AU - Wittwer, Rebekka Bettina

PY - 2024/12

Y1 - 2024/12

N2 - Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterize and qualify this process and to optimize the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10–25 μm). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and 1016 1 MeV neq cm−2. Here the results from prototypes that feature direct analogue output of a 4 × 4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using 55Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimizations.

AB - Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterize and qualify this process and to optimize the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10–25 μm). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and 1016 1 MeV neq cm−2. Here the results from prototypes that feature direct analogue output of a 4 × 4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using 55Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimizations.

KW - CMOS

KW - MAPS

KW - Particle detection

KW - Silicon

KW - Solid state detectors

KW - Test beam

UR - http://www.scopus.com/inward/record.url?scp=85204883507&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2024.169896

DO - 10.1016/j.nima.2024.169896

M3 - Article

AN - SCOPUS:85204883507

SN - 0168-9002

VL - 1069

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

M1 - 169896

ER -

Aglieri Rinella G, Alocco G, Antonelli M, Baccomi R, Beole SM, Blidaru MB et al. Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2024 Dec;1069:169896. doi: 10.1016/j.nima.2024.169896

Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

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Keywords

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