Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

G. M.T. Chai, T. J.C. Hosea, N. E. Fox, K. Hild, A. B. Ikyo, I. P. Marko, S. J. Sweeney, A. Bachmann, S. Arafin, M. C. Amann

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Abstract

We report angle dependent and temperature dependent (9 K-300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 μm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 ± 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices.

Original languageEnglish
Article number013102
JournalJournal of Applied Physics
Volume115
Issue number1
DOIs
StatePublished - 7 Jan 2014

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