@inproceedings{00e4d23ee23347abbf106080d2bf54f9,
title = "Characterization and simulation of silicon power devices up to very high temperatures",
abstract = "We investigated and calibrated physically-based high-temperature device models on the basis of measurements and simulations of industrial power MOSFETs and Non-Punch Through (NPT) 600V IGBTs (both from Infineon AG) in a temperature range from room temperature up to 750 K.",
keywords = "High-temperature device models, High-temperature electrical measurements and model calibration",
author = "P. Borthen and G. Wachutka",
year = "2006",
language = "English",
isbn = "8392263219",
series = "Proceedings of the International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2006",
pages = "612--614",
booktitle = "Proceedings of the International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2006",
note = "International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2006 ; Conference date: 22-06-2006 Through 24-06-2006",
}