Channelling effect measurements of 4He-induced damage in V3Si single crystals

O. Meyer, B. Seeber

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


Disorder produced by 0.3 MeV 4He ions in V3Si has been analysed by 2 MeV 4He ion channelling measurements. In the region of low damage level (near the surface) a narrowing of about 10% in the ψ 1 2 values and an increase in Xmin has been observed along the V chains in V3Si. The empirical formulas from Barrett based on Monte Carlo Computer calculations have been used for several model calculations. The best fit to the observed results was obtained by assuming an average displacement of 0.115 Å of all V atoms from the chain.

Original languageEnglish
Pages (from-to)603-607
Number of pages5
JournalSolid State Communications
Issue number9
StatePublished - Jun 1977
Externally publishedYes


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