Carrier recombination at screw dislocations in n-type AlGaN layers

M. Albrecht, A. Cremades, J. Krinke, S. Christiansen, O. Ambacher, J. Piqueras, H. P. Strunk, M. Stutzmann

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We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative recombination centres. From temperature dependent measurements of the EBIC contrast we find a shallow acceptor state 20 meV above the valence band. The level can be understood in terms of one-dimensional dislocation bands split off by the dislocation deformation field. In addition piezoelectric potentials play a role.

Original languageEnglish
Pages (from-to)409-414
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Issue number1
StatePublished - Nov 1999


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