Carrier recombination at screw dislocations in n-type AlGaN layers

M. Albrecht, A. Cremades, J. Krinke, S. Christiansen, O. Ambacher, J. Piqueras, H. P. Strunk, M. Stutzmann

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30 Scopus citations

Abstract

We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative recombination centres. From temperature dependent measurements of the EBIC contrast we find a shallow acceptor state 20 meV above the valence band. The level can be understood in terms of one-dimensional dislocation bands split off by the dislocation deformation field. In addition piezoelectric potentials play a role.

Original languageEnglish
Pages (from-to)409-414
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
DOIs
StatePublished - Nov 1999

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