Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers

A. F.G. Monte; J. J. Finley; A. D. Ashmore; A. M. Fox; D. J. Mowbray; M. S. Skolnick; M. Hopkinson

doi:10.1063/1.1554476

Carrier dynamics in short wavelength self-assembled InAs/Al_0.6Ga_0.4As quantum dots with indirect barriers

A. F.G. Monte
, J. J. Finley
, A. D. Ashmore
, A. M. Fox
, D. J. Mowbray
, M. S. Skolnick
, M. Hopkinson

University of Sheffield

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Carrier dynamics in short wavelength self-assembled InAs/Al_0.6Ga_0.4As quantum dots with indirect barriers were studied. Photoluminescence, photoluminescence excitaion (PLE), and time resolved PL spectroscopy was combined to investigate the self-assembled quantum dots. It was observed that the carrier capture into the dots was fast and efficient, despite the initial scattering of the electrons to the X states of the barriers. It was concluded that practical effect on the emmission efficiency was very less due to indirect nature of the barriers.

Original language	English
Pages (from-to)	3524-3528
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.1554476
State	Published - 15 Mar 2003

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title = "Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers",

abstract = "Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers were studied. Photoluminescence, photoluminescence excitaion (PLE), and time resolved PL spectroscopy was combined to investigate the self-assembled quantum dots. It was observed that the carrier capture into the dots was fast and efficient, despite the initial scattering of the electrons to the X states of the barriers. It was concluded that practical effect on the emmission efficiency was very less due to indirect nature of the barriers.",

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AU - Monte, A. F.G.

AU - Finley, J. J.

AU - Ashmore, A. D.

AU - Fox, A. M.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

AU - Hopkinson, M.

PY - 2003/3/15

Y1 - 2003/3/15

N2 - Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers were studied. Photoluminescence, photoluminescence excitaion (PLE), and time resolved PL spectroscopy was combined to investigate the self-assembled quantum dots. It was observed that the carrier capture into the dots was fast and efficient, despite the initial scattering of the electrons to the X states of the barriers. It was concluded that practical effect on the emmission efficiency was very less due to indirect nature of the barriers.

AB - Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers were studied. Photoluminescence, photoluminescence excitaion (PLE), and time resolved PL spectroscopy was combined to investigate the self-assembled quantum dots. It was observed that the carrier capture into the dots was fast and efficient, despite the initial scattering of the electrons to the X states of the barriers. It was concluded that practical effect on the emmission efficiency was very less due to indirect nature of the barriers.

UR - https://www.scopus.com/pages/publications/0037444921

U2 - 10.1063/1.1554476

DO - 10.1063/1.1554476

M3 - Article

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Carrier dynamics in short wavelength self-assembled InAs/Al_0.6Ga_0.4As quantum dots with indirect barriers

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