Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers

A. F.G. Monte, J. J. Finley, A. D. Ashmore, A. M. Fox, D. J. Mowbray, M. S. Skolnick, M. Hopkinson

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers were studied. Photoluminescence, photoluminescence excitaion (PLE), and time resolved PL spectroscopy was combined to investigate the self-assembled quantum dots. It was observed that the carrier capture into the dots was fast and efficient, despite the initial scattering of the electrons to the X states of the barriers. It was concluded that practical effect on the emmission efficiency was very less due to indirect nature of the barriers.

Original languageEnglish
Pages (from-to)3524-3528
Number of pages5
JournalJournal of Applied Physics
Volume93
Issue number6
DOIs
StatePublished - 15 Mar 2003

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