Abstract
Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers were studied. Photoluminescence, photoluminescence excitaion (PLE), and time resolved PL spectroscopy was combined to investigate the self-assembled quantum dots. It was observed that the carrier capture into the dots was fast and efficient, despite the initial scattering of the electrons to the X states of the barriers. It was concluded that practical effect on the emmission efficiency was very less due to indirect nature of the barriers.
Original language | English |
---|---|
Pages (from-to) | 3524-3528 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 93 |
Issue number | 6 |
DOIs | |
State | Published - 15 Mar 2003 |