Carrier confinement in AlGaN/GaN heterostructures grown by plasma induced molecular beam epitaxy

R. Dimitrov; L. Wittmer; H. P. Felsl; A. Mitchell; O. Ambacher; M. Stutzmann

doi:10.1002/(SICI)1521-396X(199808)168:2<R7::AID-PSSA99997>3.0.CO;2-B

Carrier confinement in AlGaN/GaN heterostructures grown by plasma induced molecular beam epitaxy

R. Dimitrov
, L. Wittmer
, H. P. Felsl
, A. Mitchell
, O. Ambacher
, M. Stutzmann

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Original language	English
Pages (from-to)	R7-R8
Journal	Physica Status Solidi (A) Applied Research
Volume	168
Issue number	2
DOIs	https://doi.org/10.1002/(SICI)1521-396X(199808)168:2<R7::AID-PSSA99997>3.0.CO;2-B
State	Published - 1998

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10.1002/(SICI)1521-396X(199808)168:2<R7::AID-PSSA99997>3.0.CO;2-B

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title = "Carrier confinement in AlGaN/GaN heterostructures grown by plasma induced molecular beam epitaxy",

author = "R. Dimitrov and L. Wittmer and Felsl, \{H. P.\} and A. Mitchell and O. Ambacher and M. Stutzmann",

year = "1998",

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T1 - Carrier confinement in AlGaN/GaN heterostructures grown by plasma induced molecular beam epitaxy

AU - Dimitrov, R.

AU - Wittmer, L.

AU - Felsl, H. P.

AU - Mitchell, A.

AU - Ambacher, O.

AU - Stutzmann, M.

PY - 1998

Y1 - 1998

UR - https://www.scopus.com/pages/publications/0032139601

U2 - 10.1002/(SICI)1521-396X(199808)168:2<R7::AID-PSSA99997>3.0.CO;2-B

DO - 10.1002/(SICI)1521-396X(199808)168:2<R7::AID-PSSA99997>3.0.CO;2-B

M3 - Article

AN - SCOPUS:0032139601

SN - 0031-8965

VL - 168

SP - R7-R8

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 2

ER -

Carrier confinement in AlGaN/GaN heterostructures grown by plasma induced molecular beam epitaxy

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