Carbon nanotubes for microelectronics: Status and future prospects

W. Hoenlein, F. Kreupl, G. S. Duesberg, A. P. Graham, M. Liebau, R. Seidel, E. Unger

Research output: Contribution to journalArticlepeer-review

94 Scopus citations

Abstract

As the semiconductor industry faces increasing technological and financial challenges, new concepts have to be assessed. The extraordinary characteristics of carbon nanotubes make them a promising candidate for applications in micro- and nanoelectronics. Catalyst mediated CVD growth is very well suited for selective, in-situ growth of nanotubes compatible with the requirements of microelectronics technology. This deposition method can be exploited for carbon nanotube vias. Semiconducting single-walled tubes can be successfully operated as carbon nanotube field-effect transistors (CNTFETs). A simulation of an ideal vertical CNTFET is presented and compared with the requirements of the ITRS roadmap. Finally, we compare an upgraded CNTFET with the most advanced silicon MOSFETs.

Original languageEnglish
Pages (from-to)663-669
Number of pages7
JournalMaterials Science and Engineering C
Volume23
Issue number6-8
DOIs
StatePublished - 15 Dec 2003
Externally publishedYes

Keywords

  • Carbon nanotube field-effect transistors
  • Carbon nanotube growth
  • Carbon nanotube vias
  • Carbon nanotubes
  • Silicon technology

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