Carbon nanotubes for interconnect applications

Franz Kreupl; Andrew P. Graham; Maik Liebau; Georg S. Duesberg; Robert Seidel; Eugen Unger

Carbon nanotubes for interconnect applications

Franz Kreupl, Andrew P. Graham, Maik Liebau, Georg S. Duesberg, Robert Seidel, Eugen Unger

Infineon Technologies AG

Research output: Contribution to journal › Conference article › peer-review

148 Scopus citations

Abstract

We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node a current density of 5-10⁸ A/cm² and a resistance of 7.8 kΩ could be achieved for a single multi-walled CNT vertical interconnect.

Original language	English
Pages (from-to)	683-686
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 2004
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 13 Dec 2004 → 15 Dec 2004

Cite this

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title = "Carbon nanotubes for interconnect applications",

abstract = "We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node a current density of 5-108 A/cm2 and a resistance of 7.8 kΩ could be achieved for a single multi-walled CNT vertical interconnect.",

author = "Franz Kreupl and Graham, {Andrew P.} and Maik Liebau and Duesberg, {Georg S.} and Robert Seidel and Eugen Unger",

note = "Funding Information: We would like to thank W. Hoenlein for continuous support, W. Pamler for artwork and Z. Gahric for expert technical assistance. The work is supported by BMBF under contract #; IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

year = "2004",

language = "English",

pages = "683--686",

journal = "Technical Digest - International Electron Devices Meeting",

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T1 - Carbon nanotubes for interconnect applications

AU - Kreupl, Franz

AU - Graham, Andrew P.

AU - Liebau, Maik

AU - Duesberg, Georg S.

AU - Seidel, Robert

AU - Unger, Eugen

N1 - Funding Information: We would like to thank W. Hoenlein for continuous support, W. Pamler for artwork and Z. Gahric for expert technical assistance. The work is supported by BMBF under contract #

PY - 2004

Y1 - 2004

N2 - We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node a current density of 5-108 A/cm2 and a resistance of 7.8 kΩ could be achieved for a single multi-walled CNT vertical interconnect.

AB - We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node a current density of 5-108 A/cm2 and a resistance of 7.8 kΩ could be achieved for a single multi-walled CNT vertical interconnect.

UR - http://www.scopus.com/inward/record.url?scp=21644462975&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:21644462975

SN - 0163-1918

SP - 683

EP - 686

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

Carbon nanotubes for interconnect applications

Abstract

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