Capacitively detected magnetic resonance of defects in MOSFETs

M. S. Brandt; R. Neuberger; M. Stutzmann

doi:10.1016/S0921-4526(99)00629-8

Capacitively detected magnetic resonance of defects in MOSFETs

M. S. Brandt, R. Neuberger, M. Stutzmann

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Walter Schottky Institut

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

In p-channel enhancement MOSFETs, a spin-dependent change of the drain-gate capacitance is observed at bias voltages near accumulation. Two resonances, with g_⊥ = 1.9979 and g_∥ = 2.008 as well as q≈4.9 are attributed to defects induced by processing as well as to transition metal impurities. The signal intensity of the capacitively detected magnetic resonance (CDMR) is approx. 30 aF, corresponding to about 400 electrons additionally trapped at the edge of the space-charge region under spin resonance conditions.

Original language	English
Pages (from-to)	1027-1030
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00629-8
State	Published - 15 Dec 1999
Event	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: 26 Jul 1999 → 30 Jul 1999

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10.1016/S0921-4526(99)00629-8

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title = "Capacitively detected magnetic resonance of defects in MOSFETs",

abstract = "In p-channel enhancement MOSFETs, a spin-dependent change of the drain-gate capacitance is observed at bias voltages near accumulation. Two resonances, with g⊥ = 1.9979 and g∥ = 2.008 as well as q≈4.9 are attributed to defects induced by processing as well as to transition metal impurities. The signal intensity of the capacitively detected magnetic resonance (CDMR) is approx. 30 aF, corresponding to about 400 electrons additionally trapped at the edge of the space-charge region under spin resonance conditions.",

author = "Brandt, {M. S.} and R. Neuberger and M. Stutzmann",

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TY - JOUR

T1 - Capacitively detected magnetic resonance of defects in MOSFETs

AU - Brandt, M. S.

AU - Neuberger, R.

AU - Stutzmann, M.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - In p-channel enhancement MOSFETs, a spin-dependent change of the drain-gate capacitance is observed at bias voltages near accumulation. Two resonances, with g⊥ = 1.9979 and g∥ = 2.008 as well as q≈4.9 are attributed to defects induced by processing as well as to transition metal impurities. The signal intensity of the capacitively detected magnetic resonance (CDMR) is approx. 30 aF, corresponding to about 400 electrons additionally trapped at the edge of the space-charge region under spin resonance conditions.

AB - In p-channel enhancement MOSFETs, a spin-dependent change of the drain-gate capacitance is observed at bias voltages near accumulation. Two resonances, with g⊥ = 1.9979 and g∥ = 2.008 as well as q≈4.9 are attributed to defects induced by processing as well as to transition metal impurities. The signal intensity of the capacitively detected magnetic resonance (CDMR) is approx. 30 aF, corresponding to about 400 electrons additionally trapped at the edge of the space-charge region under spin resonance conditions.

UR - http://www.scopus.com/inward/record.url?scp=0033314741&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00629-8

DO - 10.1016/S0921-4526(99)00629-8

M3 - Conference article

AN - SCOPUS:0033314741

SN - 0921-4526

VL - 273-274

SP - 1027

EP - 1030

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

Y2 - 26 July 1999 through 30 July 1999

ER -

Capacitively detected magnetic resonance of defects in MOSFETs

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