Abstract
Spin-dependent transport processes in hydrogenated amorphous silicon (a-Si:H) solar cells at high frequencies are studied with capacitively-detected magnetic resonance (CDMR). A resonant increase of the capacitance at room temperature is found with a g-factor of 2.0055, characteristic for the spin-dependent trapping of electrons at neutral dangling bonds. It is shown that with the help of spin-dependent capacitance measurements quantitative information on the defect density in the device can be obtained, a particular advantage over conventional electrically detected magnetic resonance (EDMR) where resonant changes of the dc conductivity are measured.
Original language | English |
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Pages (from-to) | L1172-L1174 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 38 |
Issue number | 10 B |
DOIs | |
State | Published - 15 Oct 1999 |