Abstract
Capacitance-voltage measurements have been performed on deuterated boron-doped natural type IIb diamond. They demonstrate the electrical passivation of the boron acceptors, which was manifested by a persistent decrease in capacitance after deuteration. Bias annealing experiments have been carried out to determine the charge state of the diffusing deuterium. The differences between annealing with or without bias lead to the conclusion that boron-deuterium complexes dissociate at about 750 K and that the released deuterium is positively charged.
| Original language | English |
|---|---|
| Pages (from-to) | 413-416 |
| Number of pages | 4 |
| Journal | Diamond and Related Materials |
| Volume | 9 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2000 |
| Event | 10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide - Prague, Czech Republic Duration: 12 Sep 1999 → 17 Sep 1999 |